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2003
Fortunato, Elvira, Alexandra Goncalves, Vitor Assuncao, António Marques, Hugo Águas, Luıs Pereira, Isabel Ferreira, and Rodrigo Martins. "Growth of ZnO: Ga thin films at room temperature on polymeric substrates: thickness dependence." Thin Solid Films. 442.1 (2003): 121-126. Abstract
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Fortunato, Elvira, Alexandra Goncalves, Vitor Assuncao, Antonio Marques, Hugo Aguas, Isabel Ferreira, Rodrigo Martins, and others. "Growth of ZnO: Ga thin films at room temperature on polymeric substrates: thickness dependence." Thin Solid Films. 442 (2003): 121-126. Abstract
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Bender, Marcus, Elvira Fortunato, Patrícia Nunes, Isabel Ferreira, António Marques, Rodrigo Martins, Nikos Katsarakis, Volker Cimalla, and George Kiriakidis. "Highly sensitive ZnO ozone detectors at room temperature." Japanese journal of applied physics. 42 (2003): 435. Abstract
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Assuncao, V., E. Fortunato, A. Marques, H. Aguas, I. Ferreira, M. E. V. Costa, and R. Martins. "Influence of the deposition pressure on the properties of transparent and conductive ZnO: Ga thin-film produced by rf sputtering at room temperature." Thin Solid Films. 427.1 (2003): 401-405. Abstract
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Assuncao, V., E. Fortunato, A. Marques, H. Aguas, I. Ferreira, M. E. V. Costa, and R. Martins. "Influence of the deposition pressure on the properties of transparent and conductive ZnO: Ga thin-film produced by rf sputtering at room temperature." Thin Solid Films. 427 (2003): 401-405. Abstract
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Fortunato, Elvira, V. Assunção, A. Marques, H. Águas, Rodrigo Martins, and M. E. V. Costa. "Influence of the deposition pressure on the properties of transparent and conductive ZnO: Ga thin-film produced by rf sputtering at room temperature." (2003). Abstract
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Aguas, H., V. Silva, E. Fortunato, S. Lebib, P. Roca i Cabarrocas, I. Ferreira, L. Guimaraes, and R. Martins. "Large area deposition of polymorphous silicon by plasma enhanced chemical vapor deposition at 27.12 MHz and 13.56 MHz." Japanese journal of applied physics. 42 (2003): 4935. Abstract
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Águas, H., V. Silva, E. Fortunato, S. Lebib, Roca P. i Cabarrocas, I. Ferreira, L. Guimarães, and R. Martins. "Large area deposition of polymorphous silicon by plasma enhanced chemical vapor deposition at 27.12 MHz and 13.56 MHz." Japanese journal of applied physics. 42 (2003): 4935. Abstract
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Assunção, Vitor, Elvira Fortunato, António Marques, Alexandra Gonçalves, Isabel Ferreira, Hugo Águas, and Rodrigo Martins. "New challenges on gallium-doped zinc oxide films prepared by rf magnetron sputtering." Thin Solid Films. 442.1 (2003): 102-106. Abstract
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Assunção, Vitor, Elvira Fortunato, António Marques, Alexandra Gonçalves, Isabel Ferreira, Hugo Águas, and Rodrigo Martins. "New challenges on gallium-doped zinc oxide films prepared by rf magnetron sputtering." Thin Solid Films. 442 (2003): 102-106. Abstract
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Mateus, O., and MT Antunes. "A new dinosaur tracksite in the Lower Cretaceous of Portugal." Ciências da Terra (UNL). 15 (2003): 253-262. Abstract
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Araújo, J., J. D. Mitchell, and N. Silva. "On generating countable sets of endomorphisms." Algebra Universalis. 50 (2003): 61-67. AbstractWebsite
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Aguas, H., Roca P. i Cabarrocas, S. Lebib, V. Silva, E. Fortunato, and R. Martins. "Polymorphous silicon deposited in large area reactor at 13 and 27 MHz." Thin Solid Films. 427 (2003): 6-10. Abstract
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Martins, Rodrigo, Hugo Águas, Isabel Ferreira, Elvira Fortunato, Sarra Lebib, P. Roca i Cabarrocas, and Leopoldo Guimarães. "Polymorphous silicon films deposited at 27.12 MHz." Chemical Vapor Deposition. 9.6 (2003): 333-337. Abstract
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i Martins, R.a, Águas Ferreira Fortunato Lebib Roca Cabarrocas Guimarães H. a I. a. "Polymorphous Silicon Films Deposited at 27.12 MHz." Advanced Materials. 15 (2003): 333-337. AbstractWebsite

This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nm s-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.

Martins, R.a, Águas Ferreira Fortunato Lebib Cabarrocas Guimarães H. a I. a. "Polymorphous silicon films deposited at 27.12 MHz." Chemical Vapor Deposition. 9 (2003): 333-337. AbstractWebsite

This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nms-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.

Martins, Rodrigo, Hugo Águas, Isabel Ferreira, Elvira Fortunato, Sarra Lebib, P. Roca i Cabarrocas, and Leopoldo Guimarães. "Polymorphous silicon films deposited at 27.12 MHz." Chemical Vapor Deposition. 9 (2003): 333-337. Abstract
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Águas, H., L. Raniero, L. Pereira, E. Fortunato, Roca P. i Cabarrocas, and R. Martins. "Polymorphous Silicon Films Produced in Large Area Reactors by PECVD at 27.12 MHz and 13.56 MHz." MRS Proceedings. Vol. 762. Cambridge University Press, 2003. A5-13. Abstract
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Urze, Paula, António Moniz, and Sónia Barroso Practices and trends of telework in the Portuguese industry: the results of surveys in the textile, metal and software sectors. University Library of Munich, Germany, 2003. Abstract

The aim of the TeleRisk Project on labour relations and professional risks within the context of teleworking in Portugal – supported by IDICT – Institute for Development and Inspection of Working Conditions (Ministry of Labour), is to study the practices and forms of teleworking in the manufacturing sectors in Portugal. The project chose also the software industry as a reference sector, even though it does not intend to exclude from the study any other sector of activity or the so-called “hybrid” forms of work. However, the latter must have some of the characteristics of telework. The project thus takes into account the so-called “traditional” sectors of activity, namely textile and machinery and metal engineering (machinery and equipment), not usually associated to this type of work. However, telework could include, in the so-called “traditional” sectors, other variations that are not found in technologically based sectors. One of the evaluation methods for the dynamics associated to telework consisted in carrying out surveys by means of questionnaires, aimed at employers in the sectors analysed. This paper presents some of the results of those surveys. It is important to mention that, being a preliminary analysis, it means that it does not pretend to have exhausted all the issues in the survey, but has meant that it shows the bigger tendencies, in terms of teleworking practices, of the Portuguese industry.

Godinho, M. H., JJ van der Klink, and AF Martins. "Shear-history dependent ‘equilibrium’states of liquid-crystalline hydroxypropylcellulose solutions detected by rheo-nuclear magnetic resonance." Journal of Physics: Condensed Matter. 15.32 (2003): 5461. Abstract
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Águas, H., A. Gonçalves, L. Pereira, R. Silva, E. Fortunato, and R. Martins. "Spectroscopic ellipsometry study of amorphous silicon anodically oxidised." Thin Solid Films. 427 (2003): 345-349. Abstract
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Fortunato, Elvira, Maria Helena Godinho, Hugo Santos, António Marques, Vitor Assunção, Luı́s Pereira, Hugo Águas, Isabel Ferreira, and Rodrigo Martins. "Surface modification of a new flexible substrate based on hydroxypropylcellulose for optoelectronic applications." Thin solid films. 442.1 (2003): 127-131. Abstract
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Fortunato, Elvira, Maria Helena Godinho, Hugo Santos, António Marques, Vitor Assunção, Hugo Águas, Isabel Ferreira, Rodrigo Martins, and others. "Surface modification of a new flexible substrate based on hydroxypropylcellulose for optoelectronic applications." Thin Solid Films. 442 (2003): 127-131. Abstract
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Fortunato, Elvira, Maria Helena Godinho, Hugo Santos, António Marques, Vitor Assunção, Hugo Águas, Isabel Ferreira, and Rodrigo Martins. "Surface modification of a new flexible substrate based on hydroxypropylcellulose for optoelectronic applications." Thin Solid Films. 442.1 (2003): 127-131. Abstract
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Indelicato, P., G. C. Rodrigues, J. P. Santos, P. Patté, J. P. Marques, and F. Parente. "Systematic calculation of Total Atomic Binding Energies." Hyperfine Interactions. 146-147 (2003): 115-119. Abstract
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