The effect of initial compaction on the sintering of borosilicate glass matrix composites reinforced with 25 vol.% alumina (Al2O3) particles has been studied using powder compacts that were uniaxially pressed at 74, 200 and 370 MPa. The sintering behaviour of the samples heated in the temperature range 850-1150 °C was investigated by density measurement, axial and radial shrinkage measurement and microstructural observation. The density of the sintered composites increased continuously with temperature for compacts pressed at 74 MPa, while for compacts pressed at 200 and 370 MPa it reached the maximum value at 1050 °C and at higher temperatures it decreased slightly due to swelling. The results showed anisotropic shrinkage behaviour for all the samples, which exhibited an axial shrinkage higher than the radial shrinkage, and the anisotropic character increased with the initial compaction pressure. © 2003 Elsevier Science Ltd. All rights reserved.

This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nm s-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.

This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nms-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.