A new experimental procedure combining usual isothermal DC charging and discharging with non-isothermal current measurements has been recently proposed. It is mainly suitable for very high insulating polymers and it was successfully applied to the study of space charge trapping and transport in low-density polyethylene. The analysis of the isothermal currents revealed the presence of different traps whose characteristic (de)trapping times can be deduced. The isothermal procedures allowed the selective charging of the sample. By choosing the charging field and the ratio of charge/discharge times, non-isothermal analysis permitted the differentiation of three or four peaks (at approximate to50degreesC, approximate to65degreesC, approximate to70degreesC and approximate to85degreesC) associated with charge detrapping from surface or near-surface (<20 mum) traps. These traps have activation energies between 0.21 and 1.54 eV. The mobility at 30degreesC is around 5 x 10(-16) m(2) V-1 s(-1). Samples had to be conditioned before each experiment in order to obtain reproducible results.

A new experimental procedure combining usual isothermal DC charging and discharging with non-isothermal current measurements has been recently proposed. It is mainly suitable for very high insulating polymers and it was successfully applied to the study of space charge trapping and transport in low-density polyethylene. The analysis of the isothermal currents revealed the presence of different traps whose characteristic (de)trapping times can be deduced. The isothermal procedures allowed the selective charging of the sample. By choosing the charging field and the ratio of charge/discharge times, non-isothermal analysis permitted the differentiation of three or four peaks (at approximate to50degreesC, approximate to65degreesC, approximate to70degreesC and approximate to85degreesC) associated with charge detrapping from surface or near-surface (<20 mum) traps. These traps have activation energies between 0.21 and 1.54 eV. The mobility at 30degreesC is around 5 x 10(-16) m(2) V-1 s(-1). Samples had to be conditioned before each experiment in order to obtain reproducible results.

Low density polyethylene (LDPE) films kept in a sodium chloride aqueous solution, were aged under a high AC electrical field. The films were prepared from press moulding of LDPE pellets with small amounts of antioxidants. The dielectric spectra at 30 degreesC in the range of 10(-5) Hz to 105 Hz were obtained prior and after ageing. Three different experimental techniques were used to obtain the full spectrum. For the low frequency (LF) region (10(-5) Hz to 10(-1) Hz) the time domain technique was used (charge and discharge currents were also measured). The measuring device used for the 10(-1) Hz to 10(1) Hz medium frequency (MF) region was a lock-in amplifier. While for the high frequency (HF), 10(-1) Hz to 10(5) Hz, RLC bridge measurements were performed. Differences can be seen between aged and unaged PE. The region showing less changes with ageing is the MF region where the peak of the unaged samples seems to become less defined with ageing time. This peak is probably due to additives and impurities (such as antioxidants) that will tend to slowly diffuse out with time. The LF peak is a broad peak related to localised space charge injection driven by the electric field. This peak increases in an earlier stage of ageing decreasing afterwards possibly when the polymer becomes more conductive. Finally the HF shows the beginning of a peak due to gamma and beta transitions. The later is related to dipolar rotation of carbonyl groups in amorphous polymer regions, while the former is associated to crankshaft motions in the main polymer chain. This peak decreases with ageing disappearing for the most aged samples. This could also be explained if the sample becomes more conductive.

Low density polyethylene (LDPE) films kept in a sodium chloride aqueous solution, were aged under a high AC electrical field. The films were prepared from press moulding of LDPE pellets with small amounts of antioxidants. The dielectric spectra at 30 degreesC in the range of 10(-5) Hz to 105 Hz were obtained prior and after ageing. Three different experimental techniques were used to obtain the full spectrum. For the low frequency (LF) region (10(-5) Hz to 10(-1) Hz) the time domain technique was used (charge and discharge currents were also measured). The measuring device used for the 10(-1) Hz to 10(1) Hz medium frequency (MF) region was a lock-in amplifier. While for the high frequency (HF), 10(-1) Hz to 10(5) Hz, RLC bridge measurements were performed. Differences can be seen between aged and unaged PE. The region showing less changes with ageing is the MF region where the peak of the unaged samples seems to become less defined with ageing time. This peak is probably due to additives and impurities (such as antioxidants) that will tend to slowly diffuse out with time. The LF peak is a broad peak related to localised space charge injection driven by the electric field. This peak increases in an earlier stage of ageing decreasing afterwards possibly when the polymer becomes more conductive. Finally the HF shows the beginning of a peak due to gamma and beta transitions. The later is related to dipolar rotation of carbonyl groups in amorphous polymer regions, while the former is associated to crankshaft motions in the main polymer chain. This peak decreases with ageing disappearing for the most aged samples. This could also be explained if the sample becomes more conductive.

Where a-Si:H pin devices are concerned, one of the main obstacles regarding improved performance is device stability, usually attributed to adverse behaviour at various interfaces within the device. Several attempts have been made to overcome this problem, such as the use of blocking layers at the interfaces. Although these have led to some improvements in device performance, most of the problems associated with device stability remain. This is mainly due to the defects at the interfaces, since the blocking layers (silicon alloys with carbon, nitrogen or oxygen) usually have a high density of bulk states, in comparison to intrinsic a-Si:H films. In this paper, we present a method that seems to be capable of improving device stability. It consists of performing a controlled removal of oxide interlayers at the interfaces, by an appropriate etching process. This enables the production of highly smoothed interfaces, and reduces possible cross-contamination of the i-layer from the adjacent doped layers. This amounts to a new design of typical pin devices, in which thin absorber layers are placed at the p/i and i/n interfaces. Their purpose is to trap most of the impurity atoms diffused from the doped layers, after which they are removed by appropriate etching. The fabrication of the absorbers (sacrificial layers), the nature of the etching and the tailoring of the defect profile at the interfaces will be discussed, including the performance exhibited by the resulting devices. © 2002 Elsevier Science B.V. All rights reserved.

Coal fly ashes have been vitrified by melting with Na2O and CaO as fluxing additives. Adequate heat treatments on the fly ash derived glass produced attractive dark green glass-ceramics. These glass-ceramics exhibited fine-grained microstructures consisting of esseneite and nepheline crystals, with average size below 200 nm, homogeneously dispersed in a residual glassy matrix. Several properties, such as density, thermal expansion coefficient, bending strength, hardness and brittleness index were determined and the correlation microstructure-properties is discussed. The results suggest that these coal ash-based glass-ceramics have potential applications as structural materials or as cladding materials.

The model presented is based on the heat transfer and energy balance equations that rule the set of physical and chemical interactions that take place on the gas phase of a growth process, assuming that the deposition process occurs under laminar dynamic flow conditions (Knudsen number below 1). In these conditions, the chemistry and physics of the process involved in the growth mechanism of silicon thin films produced by the hot wire or the hot-wire plasma assisted technique can be proper derived by balance equations that supply information about how the plasma density, the gas dilution and the gas temperature influence the growth mechanism and the equilibrium of the concentration of species presented on the growth surface. The model developed establishes a relation between the abundance species formed and the parameters initiators of the process such as the filament temperature and the rf power density used.