Abstract The family 81 glycoside hydrolase (GH81) from Clostridium thermocellum is a β-1,3-glucanase belonging to cellulosomal complex. The gene encoding \{GH81\} from Clostridium thermocellum (CtLam81A) was cloned and expressed displaying a molecular mass of  82 kDa. CtLam81A showed maximum activity against laminarin (100 U/mg), followed by curdlan (65 U/mg), at pH 7.0 and 75 °C. CtLam81A displayed Km, 2.1 ± 0.12 mg/ml and Vmax, 109 ± 1.8 U/mg, against laminarin under optimized conditions. CtLam81A activity was significantly enhanced by Ca2+ or Mg2+ ions. Melting curve analysis of CtLam81A showed an increase in melting temperature from 91 °C to 96 °C by Ca2+ or Mg2+ ions and decreased to 82 °C by EDTA, indicating that Ca2+ and Mg2+ ions may be involved in catalysis and in maintaining structural integrity. \{TLC\} and MALDI-TOF analysis of β-1,3-glucan hydrolysed products released initially, showed β-1,3-glucan-oligosaccharides degree of polymerization (DP) from \{DP2\} to DP7, confirming an endo-mode of action. The catalytically inactive mutant CtLam81A-E515A generated by site-directed mutagenesis was co-crystallized and tetragonal crystals diffracting up to 1.4 Å resolution were obtained. CtLam81A-E515A contained 15 α-helices and 38 β-strands forming a four-domain structure viz. a β-sandwich domain I at N-terminal, an α/β-domain II, an (α/α)6 barrel domain III, and a small 5-stranded β-sandwich domain IV.

The durability performance of stainless steel makes it an interesting alternative for the structural strengthening of reinforced concrete. Like external steel plates or fibre reinforced polymers, stainless steel can be applied using externally bonded reinforcement (EBR) or the near surface mounted (NSM) bonding techniques. In the present work, a set of single-lap shear tests were carried out using the EBR and NSM bonding techniques. The evaluation of the performance of the bonding interfaces was done with the help of the digital image correlation (DIC) technique. The tests showed that the measurements gathered with DIC should be used with caution, since there is noise in the distribution of the slips and only the slips greater than one-tenth of a millimetre were fairly well predicted. For this reason, the slips had to be smoothed out to make it easier to determine the strains in the stainless steel and the bond stress transfer between materials, which helps to determine the bond–slip relationship of the interface. Moreover, the DIC technique allowed to identify all the states developed within the interface through the load–slip responses which were also closely predicted with other monitoring devices. Considering the NSM and the EBR samples with the same bonded lengths, it can be stated that the NSM system has the best performance due to their higher strength, being observed the rupture of the stainless steel in the samples with bond lengths of 200 and 300 mm. Associated with this higher strength, the NSM specimens had an effective bond length of 168 mm which is 71.5% of that obtained for the EBR specimens (235 mm). A trapezoidal and a power functions are the proposed shapes to describe the interfacial bond–slip relationships of the NSM and EBR systems, respectively, where the maximum bond stress in the former system is 1.8 times the maximum bond stress of the latter one. © 2018, The Author(s).

© 2018 The Authors The use of disposable recyclable, eco-friendly, sustainable and low-cost devices with multiple functions is becoming a demand in the emerging area of the Internet of Things as a way to decrease the degree of complexity of the electronic circuits required to serve a plethora of applications. Moreover, for low-cost disposable applications, it is relevant the systems to be recyclable. The idea beyond the present study concerns to exploit our imagination with simple questions such as: What happens if it is possible to have a simple and universal device architecture, easy to implement on paper substrates, but capable to provide different multiple functionalities? It would be possible to have a common template for electronic systems on paper that would be then easily customized depending on the final application? The present study answers to these demands by reporting the physics and electronics behavior of a multigate paper transistor where paper is simultaneously the substrate and the dielectric, while a metal-oxide-semiconductor (IGZO) is used as the active channel. Moreover, the same device is able to present logic functionalities simply by varying the amplitude and frequency of the input gate signals. These transistors operate at drain voltages of 1 V with low power, exhibiting ION/IOFF{\textgreater} 104and a mobility ≈2 cm2V−1s−1, serving the specifications for a broad range of smart disposable low power electronics. To sustain all this, an analytical compact model was developed able to precisely reproduce the response of paper-based dual-gate FETs and provide full understanding of their unique and innovative operational characteristics.

The functional and biological significance of the selected CASP12 targets are described by the authors of the structures. The crystallographers discuss the most interesting structural features of the target proteins and assess whether these features were correctly reproduced in the predictions submitted to the CASP12 experiment. This article is protected by copyright. All rights reserved.

Spectrochimica Acta Part B: Atomic Spectroscopy, 130 (2017) 35-38. doi:10.1016/j.sab.2017.02.006

Deconstruction of cellulose, the most abundant plant cell wall polysaccharide, requires the cooperative activity of a large repertoire of microbial enzymes. Modular cellulases contain non-catalytic type A Carbohydrate-Binding Modules (CBMs) that specifically bind to the crystalline regions of cellulose, thus promoting enzyme efficacy through proximity and targeting effects. Although type A CBMs play a critical role in cellulose recycling, their mechanism of action remains poorly understood. Here we produced a library of recombinant CBMs representative of the known diversity of type A modules. The binding properties of 40 CBMs, in fusion with an N-terminal green fluorescence protein (GFP) domain, revealed that type A CBMs possess the ability to recognize different crystalline forms of cellulose and chitin over a wide range of temperatures, pHs and ionic strengths. A Spirochaeta thermophila CBM64, in particular, displayed plasticity in its capacity to bind both crystalline and soluble carbohydrates under a wide range of extreme conditions. The structure of S. thermophila StCBM64C revealed an untwisted, flat, carbohydrate-binding interface comprising the side chains of four tryptophan residues in a coplanar linear arrangement. Significantly, two highly conserved asparagine side chains, each one located between two tryptophan residues, are critical to insoluble and soluble glucan recognition but not to bind xyloglucan. Thus, CBM64 compact structure and its extended and versatile ligand interacting platform illustrates how type A CBMs target their appended plant cell wall degrading enzymes to a diversity of recalcitrant carbohydrates under a wide range of environmental conditions.

This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 • C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables.

A utilização de Polímeros Reforçados com Fibras (FRP) no reforço de estruturas de Betão Armado (BA) tem tido cada vez mais aceitação devido à sua elevada resistência e rigidez, baixo peso específico e excelente resistência aos efeitos dos agentes ambientais. No entanto, actualmente, é comum utilizarem-se técnicas de reforço que dificilmente permitem tirar partido da resistência total destes materiais. Com o objectivo de explorar a capacidade total de Polímeros Reforçados com Fibras de Carbono (CFRP), foram estudadas e desenvolvidas duas novas técnicas de reforço de vigas à flexão designadas por Continuous Reinforcement Embedded at Ends (CREatE) e Horizontal Near Surface Mounted Reinforcement (HNSMR). Posteriormente realizou-se um estudo comparativo entre o desempenho destes sistemas de reforço e o de duas outras técnicas já estudadas e usuais, nomeadamente os sistemas Externally Bonded Reinforcement (EBR) e Near Surface Mounted Reinforcement (NSMR). A técnica CREatE provou ser a mais eficaz de todas as alternativas testadas mobilizando a totalidade do compósito de CFRP e dotando as vigas de BA com uma maior capacidade resistente e com uma ductilidade mais elevada.Como complemento deste trabalho experimental, desenvolveu-se também um programa de cálculo em MATLAB, capaz de simular o problema em estudo através de um modelo numérico de análise não linear através do equilíbrio de secções. A representatividade dos dados obtidos foi verificada através de uma análise comparativa entre os valores numéricos e os obtidos experimentalmente.The use of Fiber Reinforced Polymers (FRP) in order to strengthen Reinforced Concrete (RC) structures has been increasingly accepted due to their strength and stiffness, low weight and excellent resistance to the effects of environmental aggressive agents. However, the bonding techniques available and described in the literature can not allow the full use of the mechanical properties of these materials and premature failures are often observed and described by several researchers. In order to explore the full capacity of CFRP composites, two new bonding strengthening techniques of RC beams when subjected to 4-point bending tests were studied and developed. For these new techniques, the designation of Continuous Reinforcement Embedded at Ends (CREatE) and Horizontal Near Surface Mounted Reinforcement (HNSMR) has been assigned. Posteriorly, a comparative study has been carried out between those strengthening systems performance and two traditional techniques, namely, the Externally Bonded Reinforcement (EBR) and Near Surface Mounted Reinforcement (NSMR). The CREatE technique has proved to be the most effective of all alternatives tested, with the full utilization of the CFRP composite and the highest strength, combined with the highest ductility. A code using MATLAB software was developed as a complement of this experimental work, which is able to simulate the problem under study through a nonlinear numerical model based on the equilibrium of sections. The representativeness of the numerical data has been verified afterwards through a comparative analysis between those and the experimental results.

Despite the success of exploiting the properties of amorphous oxide semiconductors for device applications, the charge transport in these materials is still not clearly understood. The observation of a definite Hall voltage suggests that electron transport in the conduction band is free-electron-like. However, the temperature dependence of the Hall and field-effect mobilities cannot be explained using a simple bandlike model. Here, we perform gated Hall effect measurements in field-effect transistors, which allow us to make two independent estimates of the charge carrier concentration and determine the Hall factor providing information on the energy dependence of the relaxation time. We demonstrate that the Hall factor in a range of sputtered and solution-processed quaternary amorphous oxides, such as a-InGaZnO, is close to two, while in ternary oxides, such as InZnO, it is near unity. This suggests that quaternary elements like Ga act as strong ionized impurity scattering centers in these materials.