Publications

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2001
Cabrita, A., L. Pereira, D. Brida, A. Lopes, A. Marques, I. Ferreira, E. Fortunato, and R. Martins. "{Silicon carbide photodiodes: Schottky and PINIP structures}." Applied Surface Science. 184 (2001): 437-442. AbstractWebsite
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Ferreira, I., M. E. V. Costa, L. Pereira, E. Fortunato, R. Martins, A. R. Ramos, and M. F. Silva. "{Silicon carbide alloys produced by hot wire, hot wire plasma-assisted and plasma-enhanced CVD techniques}." Applied Surface Science. 184 (2001): 8-19. AbstractWebsite
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Cabrita, A., J. Figueiredo, L. Pereira, H. Águas, V. Silva, D. Brida, I. Ferreira, E. Fortunato, and R. Martins. "{Thin film position sensitive detectors based on pin amorphous silicon carbide structures}." Applied Surface Science. 184 (2001): 443-447. AbstractWebsite
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2002
"{High quality a-Si:H films for MIS device applications}." Thin Solid Films. 403-404 (2002): 26-29. AbstractWebsite
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Ferreira, Isabel, Elvira Fortunato, Luı́s Pereira, M.Elisabete V. Costa, and Rodrigo Martins. "{The properties of a-Si:H films deposited on Mylar substrates by hot-wire plasma assisted technique}." Journal of Non-Crystalline Solids. 299-302 (2002): 30-35. AbstractWebsite
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Pereira, L., D. Brida, E. Fortunato, I. Ferreira, H. Águas, V. Silva, M. F. M. Costa, V. Teixeira, and R. Martins. "{a-Si:H interface optimisation for thin film position sensitive detectors produced on polymeric substrates}." Journal of Non-Crystalline Solids. 299-302 (2002): 1289-1294. AbstractWebsite
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Brida, D., E. Fortunato, H. Águas, V. Silva, A. Marques, L. Pereira, I. Ferreira, and R. Martins. "{New insights on large area flexible position sensitive detectors}." Journal of Non-Crystalline Solids. 299-302 (2002): 1272-1276. AbstractWebsite
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Cabrita, A., J. Figueiredo, L. Pereira, V. Silva, D. Brida, E. Fortunato, and R. Martins. "{Performance of a-Six:C1−x:H Schottky barrier and pin diodes used as position sensitive detectors}." Journal of Non-Crystalline Solids. 299-302 (2002): 1277-1282. AbstractWebsite
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2003
2004
Raniero, L, Aguas, H, and Pereira. "{Batch processing method to deposit a-Si : H films by PECVD}." 455-456 (2004): 104-107. AbstractWebsite
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Aguas, H, Pereira, L, Ferreira, and I. "{Effect of annealing on gold rectifying contacts in amorphous silicon}." 455-456 (2004): 96-99. AbstractWebsite
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Raniero, L, Martins, R, Aguas, and H. "{Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz}." 455-456 (2004): 532-535. AbstractWebsite
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Fortunato, E, Pimentel, A, Pereira, and L. "{High field-effect mobility zinc oxide thin film transistors produced at room temperature}." 338 (2004): 806-809. AbstractWebsite
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Martins, RMS, Silva, M. A. G., RJC, Fernandes, and FMB. "{In-situ GIXRD characterization of the crystallization of Ni-Ti sputtered thin films}." 455-456 (2004): 342-345. AbstractWebsite
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