Publications

Export 151 results:
Sort by: Author Title Type [ Year (Desc)]
2005
Zhang, S, Raniero, L, Fortunato, and E. "{Amorphous silicon based p-i-i-n structure for color sensor}." 862 (2005): 679-683. AbstractWebsite
n/a
Aguas, H, Pereira, L, and Raniero. "{Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors}." 862 (2005): 691-696. AbstractWebsite
n/a
Raniero, L, Goncalves, A, and Pimentel. "{Influence of hydrogen plasma on electrical and optical properties of transparent conductive oxides}." 862 (2005): 543-548. AbstractWebsite
n/a
Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "{Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors}." Thin Solid Films. 487 (2005): 102-106. AbstractWebsite
n/a
Pereira, L, Beckers, M, Martins, and RMS. "{Optimization of the metal/silicon ratio on nickel assisted crystallization of amorphous silicon}." 869 (2005): 45-50. AbstractWebsite
n/a
Fortunato, E, Barquinha, P, Pimentel, and A. "{Zinc oxide thin-film transistors}." 194 (2005): 225-238. AbstractWebsite
n/a
2004
Fortunato, Elvira, Luı́s Pereira, Hugo Águas, Isabel Ferreira, and Rodrigo Martins. "{Flexible position sensitive photodetectors based on a-Si:H heterostructures}." Sensors and Actuators A: Physical. 116 (2004): 119-124. AbstractWebsite
n/a
"{Effect of the discharge frequency and impedance on the structural properties of polymorphous silicon}." Thin Solid Films. 451-452 (2004): 264-268. AbstractWebsite
n/a
LGUAS, H. "{Effect of the tunnelling oxide thickness and density on the performance of MIS photodiodes}." Thin Solid Films. 451-452 (2004): 361-365. AbstractWebsite
n/a
Fortunato, E., V. Assunção, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "{High quality conductive gallium-doped zinc oxide films deposited at room temperature}." Thin Solid Films. 451-452 (2004): 443-447. AbstractWebsite
n/a
Pereira, L., H. Águas, R. M. S. Martins, P. Vilarinho, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by metal induced crystallization using different metals}." Thin Solid Films. 451-452 (2004): 334-339. AbstractWebsite
n/a
Ferreira, I. "{Properties of a-Si:H intrinsic films produced by HWPA-CVD technique}." Thin Solid Films. 451-452 (2004): 366-369. AbstractWebsite
n/a
Zhang, S., L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Águas, and R. Martins. "{Characterization of silicon carbide thin films prepared by VHF-PECVD technology}." Journal of Non-Crystalline Solids. 338-340 (2004): 530-533. AbstractWebsite
n/a
"{Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si:H MIS photodiodes}." Journal of Non-Crystalline Solids. 338-340 (2004): 810-813. AbstractWebsite
n/a
Pereira, L., H. Águas, R. M. Martins, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by gold metal induced crystallization}." Journal of Non-Crystalline Solids. 338-340 (2004): 178-182. AbstractWebsite
n/a
"{Role of the rf frequency on the structure and composition of polymorphous silicon films}." Journal of Non-Crystalline Solids. 338-340 (2004): 183-187. AbstractWebsite
n/a
Barquinha, P., L. Pereira, H. Águas, E. Fortunato, and R. Martins. "{Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering}." Materials Science in Semiconductor Processing. 7 (2004): 243-247. AbstractWebsite
n/a
Raniero, L, Aguas, H, and Pereira. "{Batch processing method to deposit a-Si : H films by PECVD}." 455-456 (2004): 104-107. AbstractWebsite
n/a
Raniero, L, Pereira, Zhang, and SB. "{Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques}." 338 (2004): 206-210. AbstractWebsite
n/a
Aguas, H, Pereira, L, Ferreira, and I. "{Effect of annealing on gold rectifying contacts in amorphous silicon}." 455-456 (2004): 96-99. AbstractWebsite
n/a
Raniero, L, Martins, R, Aguas, and H. "{Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz}." 455-456 (2004): 532-535. AbstractWebsite
n/a
Fortunato, E, Pimentel, A, Pereira, and L. "{High field-effect mobility zinc oxide thin film transistors produced at room temperature}." 338 (2004): 806-809. AbstractWebsite
n/a
Martins, RMS, Silva, M. A. G., RJC, Fernandes, and FMB. "{In-situ GIXRD characterization of the crystallization of Ni-Ti sputtered thin films}." 455-456 (2004): 342-345. AbstractWebsite
n/a
Aguas, H, Pereira, L, and Raniero. "{MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge}." 455-456 (2004): 73-76. AbstractWebsite
n/a
Fortunato, E., A. Gonçalves, A. Marques, A. Viana, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "{New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering}." Surface and Coatings Technology. 180-181 (2004): 20-25. AbstractWebsite
n/a