Publications

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Submitted
Schmeisser, Dieter, Joerg Haeberle, Pedro Barquinha, Diana Gaspar, Luis Pereira, Rodrigo Martins, and Elvira Fortunato. "{Electronic structure of amorphous ZnO films}." {PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 9-10}. Eds. M. {Godlewski, and A. } Zakrzewski. Vol. {11}. {Physica Status Solidi C-Current Topics in Solid State Physics}, {11}. Submitted. {1476-1480}. Abstract

{We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}

2011
Nolan, M. G., J. A. Hamilton, S. O’Brien, G. Bruno, L. Pereira, E. Fortunato, R. Martins, I. M. Povey, and M. E. Pemble. "{The characterisation of aerosol assisted CVD conducting, photocatalytic indium doped zinc oxide films}." Journal of Photochemistry and Photobiology A: Chemistry. 219 (2011): 10-15. AbstractWebsite
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O'Brien, Shane, Mehmet \c{C}opuroglu, Paul Tassie, Mark G. Nolan, Jeff A. Hamilton, Ian Povey, Luis Pereira, Rodrigo Martins, Elvira Fortunato, and Martyn E. Pemble. "{The effect of dopants on the morphology, microstructure and electrical properties of transparent zinc oxide films prepared by the sol-gel method}." Thin Solid Films. 520 (2011): 1174-1177. AbstractWebsite
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2010
O'Brien, Shane, Mark G. Nolan, Mehmet \c{C}opuroglu, Jeff A. Hamilton, Ian Povey, Luis Pereira, Rodrigo Martins, Elvira Fortunato, and Martyn Pemble. "{Zinc oxide thin films: Characterization and potential applications}." Thin Solid Films. 518 (2010): 4515-4519. AbstractWebsite
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2008
Martins, M. S. Rui, Schell, N., Reuther, and H. "{Characterization of Ni-Ti (Shape Memory Alloy) Thin Film by in-situ XRD and Complementary ex-situ Techniques}." 587-588 (2008): 672-676. AbstractWebsite
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Prabakaran, R., Aguas, H., Pereira, and L. "{Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique}." 587-588 (2008): 308-312. AbstractWebsite
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2007
Pereira, Luis, Aguas, Hugo, Beckers, and Manfred. "{Characterization of nickel induced crystallized silicon by spectroscopic ellipsornetry}." 910 (2007): 529-534. AbstractWebsite
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Aguas, Hugo, Pereira, Luis, Costa, and Daniel. "{Role of the oxide layer on the performances of a-Si : H schottky structures applied to PDS fabrication}." 910 (2007): 415-420. AbstractWebsite
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2006
Zhang, S., L. Pereira, Z. Hu, L. Ranieiro, E. Fortonato, I. Ferreira, and R. Martins. "{Characterization of nanocrystalline silicon carbide films}." Journal of Non-Crystalline Solids. 352 (2006): 1410-1415. AbstractWebsite
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2005
Aguas, H, Pereira, L, and Raniero. "{Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors}." 862 (2005): 691-696. AbstractWebsite
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2004
Raniero, L, Aguas, H, and Pereira. "{Batch processing method to deposit a-Si : H films by PECVD}." 455-456 (2004): 104-107. AbstractWebsite
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Aguas, H, Pereira, L, Ferreira, and I. "{Effect of annealing on gold rectifying contacts in amorphous silicon}." 455-456 (2004): 96-99. AbstractWebsite
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Raniero, L, Martins, R, Aguas, and H. "{Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz}." 455-456 (2004): 532-535. AbstractWebsite
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Aguas, H, Pereira, L, and Raniero. "{MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge}." 455-456 (2004): 73-76. AbstractWebsite
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Pereira, L, Aguas, H, and Raniero. "{Role of substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition}." 455-456 (2004): 112-115. AbstractWebsite
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Pereira, L, Aguas, H, Igreja, and R. "{Sputtering preparation of silicon nitride thin films for gate dielectric applications}." 455-456 (2004): 69-72. AbstractWebsite
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2003
Aguas, H, Pereira, L, Goullet, and A. "{Correlation between the tunnelling oxide and I-V curves of MIS photodiodes}." 762 (2003): 217-222. AbstractWebsite
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Aguas, H, Raniero, L, and Pereira. "{Polymorphous silicon films produced in large area reactors by PECVD at 27.12 MHz and 13.56 MHz}." 762 (2003): 589-594. AbstractWebsite
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2002
Aguas, H, Fortunato, E, Pereira, and L. "{Role of the i-layer thickness in the performance of a-Si : H Schottky barrier photodiodes}." 230-2 (2002): 587-590. AbstractWebsite
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