Publications

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2004
Fortunato, Elvira, Luı́s Pereira, Hugo Águas, Isabel Ferreira, and Rodrigo Martins. "{Flexible position sensitive photodetectors based on a-Si:H heterostructures}." Sensors and Actuators A: Physical. 116 (2004): 119-124. AbstractWebsite
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Fortunato, E., V. Assunção, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "{High quality conductive gallium-doped zinc oxide films deposited at room temperature}." Thin Solid Films. 451-452 (2004): 443-447. AbstractWebsite
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Pereira, L., H. Águas, R. M. S. Martins, P. Vilarinho, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by metal induced crystallization using different metals}." Thin Solid Films. 451-452 (2004): 334-339. AbstractWebsite
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Zhang, S., L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Águas, and R. Martins. "{Characterization of silicon carbide thin films prepared by VHF-PECVD technology}." Journal of Non-Crystalline Solids. 338-340 (2004): 530-533. AbstractWebsite
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Pereira, L., H. Águas, R. M. Martins, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by gold metal induced crystallization}." Journal of Non-Crystalline Solids. 338-340 (2004): 178-182. AbstractWebsite
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Barquinha, P., L. Pereira, H. Águas, E. Fortunato, and R. Martins. "{Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering}." Materials Science in Semiconductor Processing. 7 (2004): 243-247. AbstractWebsite
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Raniero, L, Aguas, H, and Pereira. "{Batch processing method to deposit a-Si : H films by PECVD}." 455-456 (2004): 104-107. AbstractWebsite
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Aguas, H, Pereira, L, Ferreira, and I. "{Effect of annealing on gold rectifying contacts in amorphous silicon}." 455-456 (2004): 96-99. AbstractWebsite
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Raniero, L, Martins, R, Aguas, and H. "{Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz}." 455-456 (2004): 532-535. AbstractWebsite
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Fortunato, E, Pimentel, A, Pereira, and L. "{High field-effect mobility zinc oxide thin film transistors produced at room temperature}." 338 (2004): 806-809. AbstractWebsite
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Aguas, H, Pereira, L, and Raniero. "{MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge}." 455-456 (2004): 73-76. AbstractWebsite
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Fortunato, E., A. Gonçalves, A. Marques, A. Viana, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "{New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering}." Surface and Coatings Technology. 180-181 (2004): 20-25. AbstractWebsite
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Fortunato, E, Barquinha, P, Pimentel, and A. "{Next generation of thin film transistors based on zinc oxide}." 811 (2004): 347-352. AbstractWebsite
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Pereira, L., A. Marques, H. Águas, N. Nedev, S. Georgiev, E. Fortunato, and R. Martins. "{Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application}." Materials Science and Engineering: B. 109 (2004): 89-93. AbstractWebsite
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Pereira, L, Aguas, H, and Raniero. "{Role of substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition}." 455-456 (2004): 112-115. AbstractWebsite
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Silva, M. A. G., A, Raniero, L, Ferreira, and E. "{Silicon etching in CF(4)/O(2) and SF(6) atmospheres}." 455-456 (2004): 120-123. AbstractWebsite
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Pereira, L, Aguas, H, Igreja, and R. "{Sputtering preparation of silicon nitride thin films for gate dielectric applications}." 455-456 (2004): 69-72. AbstractWebsite
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Fortunato, E, Assuncao, V, Marques, and A. "{ZnO : Ga thin films produced by RF sputtering at room temperature: Effect of the power density}." 455-456 (2004): 12-15. AbstractWebsite
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2003
Fortunato, E, Assuncao, V, Marques, and A. "{Characterization of transparent and conductive ZnO : Ga thin films produced by rf sputtering at room temperature}." 763 (2003): 225-230. AbstractWebsite
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Aguas, H, Pereira, L, Goullet, and A. "{Correlation between the tunnelling oxide and I-V curves of MIS photodiodes}." 762 (2003): 217-222. AbstractWebsite
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Fortunato, E, Goncalves, A, and Marques. "{Gallium zinc oxide coated polymeric substrates for optoelectronic applications}." 769 (2003): 291-296. AbstractWebsite
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Aguas, H, Raniero, L, and Pereira. "{Polymorphous silicon films produced in large area reactors by PECVD at 27.12 MHz and 13.56 MHz}." 762 (2003): 589-594. AbstractWebsite
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2002
Pereira, L., D. Brida, E. Fortunato, I. Ferreira, H. Águas, V. Silva, M. F. M. Costa, V. Teixeira, and R. Martins. "{a-Si:H interface optimisation for thin film position sensitive detectors produced on polymeric substrates}." Journal of Non-Crystalline Solids. 299-302 (2002): 1289-1294. AbstractWebsite
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Brida, D., E. Fortunato, H. Águas, V. Silva, A. Marques, L. Pereira, I. Ferreira, and R. Martins. "{New insights on large area flexible position sensitive detectors}." Journal of Non-Crystalline Solids. 299-302 (2002): 1272-1276. AbstractWebsite
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Cabrita, A, Pereira, L, Brida, and D. "{Role of the density of states in the colour selection of the collection spectrum of amorphous silicon-based Schottky photodiodes}." 230-2 (2002): 559-562. AbstractWebsite
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