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A
Alves, E., R. C. da Silva, J. V. Pinto, T. Monteiro, B. Savoini, D. Caceres, R. Gonzalez, and Y. Chen, "Radiation-damage recovery in undoped and oxidized Li doped MgO crystals implanted with lithium ions", Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 206, pp. 148-152, 2003. AbstractWebsite
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Alves, E., J. V. Pinto, R. C. da Silva, M. Peres, M. J. Soares, and T. Monteiro, "Optical behaviour of Er doped rutile by ion implantation", Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 250, pp. 363-367, 2006. AbstractWebsite
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Borges, R. P., J. V. Pinto, R. C. da Silva, A. P. Goncalves, M. M. Cruz, and M. Godinho, "Ferromagnetism in ZnO doped with Co by ion implantation", Journal of Magnetism and Magnetic Materials, vol. 316, issue 2, pp. E191-E194, 2007. AbstractWebsite
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Branquinho, R., B. Veigas, J. V. Pinto, R. Martins, E. Fortunato, and P. V. Baptista, "Real-time monitoring of PCR amplification of proto-oncogene c-MYC using a Ta2O5 electrolyte-insulator-semiconductor sensor", Biosensors & Bioelectronics, vol. 28, issue 1, pp. 44-49, 2011. Abstract
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Branquinho, R., J. V. Pinto, T. Busani, P. Barquinha, L. Pereira, P. V. Baptista, R. Martins, and E. Fortunato, "{Plastic Compatible Sputtered Ta O Sensitive Layer for Oxide Semiconductor TFT Sensors}", Journal of Display Technology, vol. 9, no. 9, pp. 723–728, 2013. Abstract

The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta O was investigated. Structural and morphological features of these films were analyzed before and after annealing at various tem- peratures. The deposited films are amorphous up to 600 Cand crystallize at 700 C in an orthorhombic phase. Electrolyte-insu- lator-semiconductor (EIS) field effect based sensors with an amor- phousTa O sensing layer showed pHsensitivity above 50 mV/pH. For sensors annealed above 200 C pH sensitivity decreased with increasing temperature. Stabilized sensor response andmaximum pHsensitivitywas achieved after low temperature annealing at 200 C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors

Branquinho, R., J. V. Pinto, T. Busani, P. Barquinha, L. Pereira, P. Viana Baptista, R. Martins, and E. Fortunato, "Plastic Compatible Sputtered Ta2O5 Sensitive Layer for Oxide Semiconductor TFT Sensors", Display Technology, Journal of, vol. 9, issue 9, pp. 723-728, 2013. Abstract

The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta2O5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 °C and crystallize at 700 °C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 °C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 °C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.

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Casella, C., H. Costantini, a. Lemut, B. Limata, D. Bemmerer, R. Bonetti, C. Broggini, L. Campajola, P. Cocconi, P. Corvisiero, J. Cruz, a. D'Onofrio, a. Formicola, Z. Fülöp, G. Gervino, L. Gialanella, a. Guglielmetti, C. Gustavino, G. Gyurky, a. Loiano, G. Imbriani, P. a. Jesus, M. Junker, P. Musico, a. Ordine, F. Parodi, M. Parolin, J. V. Pinto, P. Prati, J. P. Ribeiro, V. Roca, D. Rogalla, C. Rolfs, M. Romano, C. Rossi-Alvarez, a. Rottura, F. Schuemann, E. Somorjai, F. Strieder, F. Terrasi, H. P. Trautvetter, a. Vomiero, and S. Zavatarelli, "{A new setup for the underground study of capture reactions}", Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 489, pp. 160–169, 2002. Abstract

For the study of astrophysically relevant capture reactions in the underground laboratory LUNA a new setup of high sensitivity has been implemented. The setup includes a windowless gas target, a 4$π$ BGO summing crystal, and beam calorimeters. The setup has been recently used to measure the d(p,$\gamma$)3He cross-section for the first time within its solar Gamow peak, i.e. down to 2.5keV c.m. energy. The features of the optimized setup are described. © 2002 Elsevier Science B.V. All rights reserved.

Casella, C., H. Costantini, A. Lemut, B. Limata, D. Bemmerer, R. Bonetti, C. Broggini, L. Campajola, P. Cocconi, P. Corvisiero, J. Cruz, A. D'Onofrio, A. Formicola, Z. Fulop, G. Gervino, L. Gialanella, A. Guglielmetti, C. Gustavino, G. Gyurky, A. Loiano, G. Imbriani, A. P. Jesus, M. Junker, P. Musico, A. Ordine, F. Parodi, M. Parolin, J. V. Pinto, P. Prati, J. P. Ribeiro, V. Roca, D. Rogalla, C. Rolfs, M. Romano, C. Rossi-Alvarez, A. Rottura, F. Schuemann, E. Somorjai, F. Strieder, F. Terrasi, H. P. Trautvetter, A. Vomiero, and S. Zavatarelli, "A new setup for the underground study of capture reactions", Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment, vol. 489, issue 1-3, pp. 160-169, 2002. AbstractWebsite
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Casella, C., H. Costantini, A. Lemut, B. Limata, R. Bonetti, C. Broggini, L. Campajola, P. Corvisiero, J. Cruz, A. D'Onofrio, A. Formicola, Z. Fulop, G. Gervino, L. Gialanella, A. Guglielmetti, C. Gustavino, G. Gyurky, G. Imbriani, A. P. Jesus, M. Junker, A. Ordine, J. V. Pinto, P. Prati, J. P. Ribeiro, V. Roca, D. Rogalla, C. Rolfs, M. Romano, C. Rossi-Alvarez, F. Scheumann, E. Somorjai, O. Straniero, F. Strieder, F. Terrasi, H. P. Tratuvetter, S. Zavatarelli, and L. Collaboration, "First measurement of the d(p, gamma)He-3 cross section down to the solar Gamow peak", Nuclear Physics A, vol. 706, issue 1-2, pp. 203-216, 2002. AbstractWebsite
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Casimiro, M. H., A. G. Silva, J. V. Pinto, A. M. Ramos, J. Vital, and L. M. Ferreira, "Catalytic poly(vinyl alcohol) functionalized membranes obtained by gamma irradiation", Radiation Physics and Chemistry, vol. 81, issue 9, pp. 1314-1318, 2012. Abstract
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Ceia, T. F., A. G. Silva, C. S. Ribeiro, J. V. Pinto, M. H. Casimiro, A. M. Ramos, and J. Vital, "PVA composite catalytic membranes for hyacinth flavour synthesis in a pervaporation membrane reactor", Catalysis Today, vol. 236, pp. 98-107, 2014. Abstract
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Centeno, P., M. F. Alexandre, M. Chapa, J. V. Pinto, J. Deuermeier, T. Mateus, E. Fortunato, R. Martins, H. Águas, and M. J. Mendes, {Self-Cleaned Photonic-Enhanced Solar Cells with Nanostructured Parylene-C}, , vol. 2000264, pp. 1–9, 2020. Abstract

Abstract Photonic front-coatings with self-cleaning properties are presented as means to enhance the efficiency and outdoor performance of thin-film solar cells, via optical enhancement while simultaneously minimizing soiling-related losses. This is achieved by structuring parylene-C transparent encapsulants using a low-cost and highly-scalable colloidal-lithography methodology. As a result, superhydrophobic surfaces with broadband light-trapping properties are developed. The optimized parylene coatings show remarkably high water contact angles of up to 165.6° and extremely low adhesion, allowing effective surface self-cleaning. The controlled nano/micro-structuring of the surface features also generates strong anti-reflection and light scattering effects, corroborated by numeric electromagnetic modeling, which lead to pronounced photocurrent enhancement along the UV?vis?IR range. The impact of these photonic-structured encapsulants is demonstrated on nanocrystalline silicon solar cells, that show short-circuit current density gains of up to 23.6%, relative to planar reference cells. Furthermore, the improvement of the devices' angular response enables an enhancement of up to 35.2% in the average daily power generation.

Coelho, J., R. F. Correia, S. Silvestre, T. Pinheiro, A. C. Marques, R. M. P. Correia, J. V. Pinto, E. Fortunato, and R. Martins, "{Paper-based laser-induced graphene for sustainable and flexible microsupercapacitor applications}", Microchimica Acta, vol. 190, no. 1, pp. 1–10, 2023. Abstract

Laser-induced graphene (LIG) is as a promising material for flexible microsupercapacitors (MSCs) due to its simple and cost-effective processing. However, LIG-MSC research and production has been centered on non-sustainable polymeric substrates, such as polyimide. In this work, it is presented a cost-effective, reproducible, and robust approach for the preparation of LIG structures via a one-step laser direct writing on chromatography paper. The developed strategy relies on soaking the paper in a 0.1 M sodium tetraborate solution (borax) prior to the laser processing. Borax acts as a fire-retardant agent, thus allowing the laser processing of sensitive substrates that other way would be easily destroyed under the high-energy beam. LIG on paper exhibiting low sheet resistance (30 $Ømega$ sq−1) and improved electrode/electrolyte interface was obtained by the proposed method. When used as microsupercapacitor electrodes, this laser-induced graphene resulted in specific capacitances of 4.6 mF cm−2 (0.015 mA cm−2). Furthermore, the devices exhibit excellent cycling stability (> 10,000 cycles at 0.5 mA cm−2) and good mechanical properties. By connecting the devices in series and parallel, it was also possible to control the voltage and energy delivered by the system. Thus, paper-based LIG-MSC can be used as energy storage devices for flexible, low-cost, and portable electronics. Additionally, due to their flexible design and architecture, they can be easily adapted to other circuits and applications with different power requirements. Graphical Abstract: [Figure not available: see fulltext.]

Correia, R., J. Deuermeier, M. R. Correia, J. {Vaz Pinto}, J. Coelho, E. Fortunato, and R. Martins, "{Biocompatible Parylene-C Laser-Induced Graphene Electrodes for Microsupercapacitor Applications}", ACS Applied Materials {&} Interfaces, vol. 14, no. 41: American Chemical Society, pp. 46427–46438, oct, 2022. AbstractWebsite
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Cruz, M. M., J. V. Pinto, R. C. da Silva, E. Alves, R. Gonzalez, and M. Godinho, "Relaxation behaviour of Co and Ni implanted into MgO", Journal of Magnetism and Magnetic Materials, vol. 316, issue 2, pp. E776-E778, 2007. AbstractWebsite
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Cruz, M. M., R. C. Silva, J. V. Pinto, R. P. Borges, N. Franco, and A. Casaca, "{Formation of oriented nickel aggregates in rutile single crystals by Ni implantation}", Journal of Magnetism and Magnetic Materials, vol. 340: Elsevier, pp. 102–108, 2013. AbstractWebsite

The magnetic and electrical properties of Ni implanted single crystalline TiO2 rutile were studied for nominal implanted fluences between 0.5?1017 cm−2 and 2.0?1017 cm−2 with 150 keV energy, corre- sponding to maximum atomic concentrations between 9 at{%} and 27 at{%} at 65 nm depth, in order to study the formation of metallic oriented aggregates. The results indicate that the as implanted crystals exhibit superparamagnetic behavior for the two higher fluences, which is attributed to the formation of nanosized nickel clusters with an average size related with the implanted concentration, while only paramagnetic behavior is observed for the lowest fluence. Annealing at 1073 K induces the aggregation of the implanted nickel and enhances the magnetization in all samples. The associated anisotropic behavior indicates preferred orientations of the nickel aggregates in the rutile lattice consistent with Rutherford backscattering spectrometry—channelling results. Electrical conductivity displays anisotropic behavior but no magnetoresistive effects were detected.

Cruz, M. M., R. C. da Silva, J. V. Pinto, R. G. Gonzalez, E. Alves, and M. Godinho, "Magnetic behavior of Co and Ni implanted MgO", Journal of Magnetism and Magnetic Materials, vol. 272, pp. 840-842, 2004. AbstractWebsite
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Duarte, P., D. P. Ferreira, T. F. Lopes, J. V. Pinto, I. M. Fonseca, I. Ferreira Machado, and L. F. Vieira Ferreira, "DSM as a probe for the characterization of modified mesoporous silicas", Microporous and Mesoporous Materials, vol. 161, pp. 139-147, 2012. Abstract
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Figueiredo, V., J. V. Pinto, J. Deuermeier, R. Barros, E. Alves, R. Martins, and E. Fortunato, "{p-Type Cu O Thin-Film Transistors Produced by Thermal Oxidation}", Journal of Display Technology, vol. 9, no. 9, pp. 735–740, 2013. Abstract

Thin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different tempera- tures (150–450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 Cand its conversion toCuO starts at 250 C. For lower thick- nesses 40 nm, the films oxidized at 250 Cshowed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively.

Figueiredo, V., J. V. Pinto, J. Deuermeier, R. Barros, E. Alves, R. Martins, and E. Fortunato, "p-Type CuxO Thin-Film Transistors Produced by Thermal Oxidation", Journal of Display Technology, vol. 9, issue 9, pp. 6, 2013. AbstractWebsite
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Figueiredo, V., E. Elangovan, R. Barros, J. V. Pinto, T. Busani, R. Martins, and E. Fortunato, "{p-Type Cu x O Films Deposited at Room Temperature for Thin-Film Transistors}", Journal of Display Technology, vol. 8, no. 1, pp. 41–47, 2012. Abstract

Thin-films of copper oxide @Cu OA were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure @O??A. A metallic Cu film with cubic structure obtained from 0{%} O?? has been transformed to cubic CuPO phase for the increase in O?? to 9{%} but then changed to monoclinic CuO phase (for O?? PS7). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstruc- tures). The Cu O films produced with O?? ranging between 9{%} and 75{%} showed p-type behavior, which were successfully applied to produce thin-film transistors.

Firmino, R., E. Carlos, J. V. Pinto, J. Deuermeier, R. Martins, E. Fortunato, P. Barquinha, and R. Branquinho, "{Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors}", Nanomaterials, vol. 12, no. 13, pp. 2167, jun, 2022. AbstractWebsite

{\textless}p{\textgreater}Indium oxide (In2O3)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide have not received much attention, as studies have mainly focused on tin and zinc, and even fewer have been explored by solution processes. This work focuses on developing solution-combustion-processed hafnium (Hf)-doped In2O3 thin films and evaluating different annealing parameters on TCO's properties using a low environmental impact solvent. Optimized TCOs were achieved for 0.5 M{%} Hf-doped In2O3 when produced at 400 °C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10−2 $Ømega$.cm, a mobility of 6.65 cm2/V.s, and a carrier concentration of 1.72 × 1019 cm−3. Then, these results were improved by using rapid thermal annealing (RTA) for 10 min at 600 °C, reaching a bulk resistivity of 3.95 × 10 −3 $Ømega$.cm, a mobility of 21 cm2/V.s, and a carrier concentration of 7.98 × 1019 cm−3, in air. The present work brings solution-based TCOs a step closer to low-cost optoelectronic applications.{\textless}/p{\textgreater}

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Gonçalves, A., J. Resende, A. C. Marques, J. V. Pinto, D. Nunes, A. Marie, R. Gonçalves, L. Pereira, R. Martins, and E. Fortunato, "Smart optically active VO nanostructured layers applied in roof-type ceramic tiles for energy efficiency", Solar Energy Materials & Solar Cells, vol. 150, pp. 1-9, 2016.
Goswami, S., S. Nandy, A. N. Banerjee, A. Kiazadeh, G. R. Dillip, J. V. Pinto, S. W. Joo, R. Martins, and E. Fortunato, "{“Electro-Typing” on a Carbon-Nanoparticles-Filled Polymeric Film using Conducting Atomic Force Microscopy}", Advanced Materials, vol. 29, no. 47, 2017. Abstract

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Next-generation electrical nanoimprinting of a polymeric data sheet based on charge trapping phenomena is reported here. Carbon nanoparticles (CNPs) (waste carbon product) are deployed into a polymeric matrix (polyaniline) (PANI) as a charge trapping layer. The data are recorded on the CNPs-filled polyaniline device layer by “electro-typing” under a voltage pulse (VET, from ±1 to ±7 V), which is applied to the device layer through a localized charge-injection method. The core idea of this device is to make an electrical image through the charge trapping mechanism, which can be “read” further by the subsequent electrical mapping. The density of stored charges at the carbon–polyaniline layer, near the metal/polymer interface, is found to depend on the voltage amplitude, i.e., the number of injected charge carriers. The relaxation of the stored charges is studied by different probe voltages and for different devices, depending on the percolation of the CNPs into the PANI. The polymeric data sheet retains the recorded data for more than 6 h, which can be refreshed or erased at will. Also, a write–read–erase–read cycle is performed for the smallest “bit” of stored information through a single contact between the probe and the device layer.

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Kardarian, K., D. Nunes, P. {Maria Sberna}, A. Ginsburg, D. A. Keller, J. {Vaz Pinto}, J. Deuermeier, A. Y. Anderson, A. Zaban, R. Martins, and E. Fortunato, "{Effect of Mg doping on Cu2O thin films and their behavior on the TiO2/Cu2O heterojunction solar cells}", Solar Energy Materials and Solar Cells, vol. 147, pp. 27–36, apr, 2016. AbstractWebsite

Abstract The present work shows the effect of magnesium doping on structural, optoelectrical and electrical properties of Cu2O thin films prepared by spray pyrolysis. The variation in the concentration of Mg shows significant impact on the final thin film properties, whereas the film doped with 0.5 at{%} of Mg exhibited major property improvements in comparison with the undoped thin film and among the other concentrations tested. This condition was further applied for the deposition of an absorber layer in a heterojunction solar cell array with a gradient in thicknesses of active layers to investigate the impact of changing thicknesses on the PV parameters of the solar cell. TiO2 was used as a window layer and the 0.5 at{%} Cu2O doped film as an absorber layer. The produced heterojunction solar cell array was further exposed to a rapid thermal annealing treatment. The I–V measurements show an open circuit voltage of up to 365 mV and a short circuit current density, which is dependent on absorber layer thickness, and reaches to a maximum value of 0.9 mA/cm2.