Joana Vaz Pinto (J.V. Pinto) graduated in Physics Engineering from Universidade Nova de Lisboa (FCT-UNL) and completed a PhD degree in Applied Physics from the same University in 2008 having the host institution at Instituto Tecnológico e Nuclear (ITN) in collaboration with Laboratório de Caracterização Magnética e Baixas Temperaturas (LCMBT) of Universidade de Lisboa (FC-UL). The collaboration between these 3 institutions allowed her to achieve during the PhD a deep knowledge on semiconductor and insulating metal oxides and on magnetic nanoparticles characterization, using Ion Beam techniques, XRD, SQUID and I- characteristics.

In October 2008, J.V. Pinto joined CENIMAT with a Postdoctoral research grant focused to the development of Field Effect Devices for biosensing applications. She is currently an Invited Professor at the Materials Science Department (since 2015), teaching mainly Microelectronics processing and Nanocharacterization Memory based devices and has supervised more than 15 MSc dissertations. She is also one of the responsible for the exploitation of XRD and AFM advanced characterization techniques of the research Centre (CENIMAT|i3N). Her current research is focused on patterning methodologies and on implementing thin film microelectronic devices in ultrathin and conformable membranes of Parylene for conformable electronics and bioelectronics. She has been exploiting this polymer in its wide range of applications, from substrate to dielectric and encapsulation layers for the fabrication of different types of devices, from TFTs to capacitive/resistive sensors, solar cells and electrochromic displays. She Published more than 50 papers in peer review journals and develops her research activities in a multidisciplinary field collaborating in many different areas from materials science to biotechnology and heritage and conservation studies. In her curriculum Ciência Vitae the most frequent terms in the context of scientific and technological output are: Thin film devices, TFTs, sensors, Solar Cells; Memory devices.


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