{p-Type Cu O Thin-Film Transistors Produced by Thermal Oxidation}

Figueiredo, V., J. V. Pinto, J. Deuermeier, R. Barros, E. Alves, R. Martins, and E. Fortunato, "{p-Type Cu O Thin-Film Transistors Produced by Thermal Oxidation}", Journal of Display Technology, vol. 9, no. 9, pp. 735–740, 2013.


Thin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different tempera- tures (150–450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 Cand its conversion toCuO starts at 250 C. For lower thick- nesses 40 nm, the films oxidized at 250 Cshowed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively.