Joana Vaz Pinto received her degree in Physics Engineering from Universidade Nova de Lisboa in 2000. She concluded a Ph.D in Applied Physics at the same university with the thesis: “Modification of the Electric and Magnetic Properties of Metallic Oxides by Ion Implantation” work that was developed at Instituto Tecnológico e Nuclear (ITN) and in collaboration with Faculdade de Ciências da Universidade de Lisboa (FC-UL).

She started a PosDoc research in 2008 at the materials research centre CENIMAT where the main topics of her research were focused on the development of thin film transistors based on amorphous semiconductor oxides, to be used as biosensors (ISFET, ENFET and DNAFET).

Since 2015 she is an Assistant Professor at the Materials Science Department (DCM) of FCT-UNL  giving support on lectures of both Materials Science Engineering and Micro and Nanotechnologies Engineering Master Programs. Her main activities have been focused on microelectronic devices, fabrication and characterization, and their integration and application to sensor systems. She is responsible for teaching a course on Memory and Storage Devices (Gravação Electrónica de Gravação) She undertakes the supervision of one of the XRD  systems present at CENIMAT and for  the AFM equipment. Her main expertize are focused on Materials Characterization using AFM, XRD and RBS techniques.