{p-Type Cu x O Films Deposited at Room Temperature for Thin-Film Transistors}

Citation:
Figueiredo, V., E. Elangovan, R. Barros, J. V. Pinto, T. Busani, R. Martins, and E. Fortunato, "{p-Type Cu x O Films Deposited at Room Temperature for Thin-Film Transistors}", Journal of Display Technology, vol. 8, no. 1, pp. 41–47, 2012.

Abstract:

Thin-films of copper oxide @Cu OA were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure @O??A. A metallic Cu film with cubic structure obtained from 0{%} O?? has been transformed to cubic CuPO phase for the increase in O?? to 9{%} but then changed to monoclinic CuO phase (for O?? PS7). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstruc- tures). The Cu O films produced with O?? ranging between 9{%} and 75{%} showed p-type behavior, which were successfully applied to produce thin-film transistors.

Notes:

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