Isabel Maria Mercês Ferreira
Assistant Professor at DCM-CENIMAT/I3N
imf@fct.unl.pt
(email)
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Ferreira, Isabel, Bruno Brás, José Inácio Martins, Nuno Correia, Pedro Barquinha, Elvira Fortunato, and Rodrigo Martins.
"
Solid-state paper batteries for controlling paper transistors
."
Electrochimica Acta
. 56.3 (2011): 1099-1105.
Abstract
n/a
Ferreira, Isabel, Rodrigo Martins, and Elvira Fortunato.
"
Growth Model of Gas Species Produced by the Hot-Wire and Hot-Wire Plasma-Assisted Techniques
."
Key Engineering Materials
. 230 (2002): 603-606.
Abstract
n/a
Ferreira, I., A. Cabrita, F. Braz Fernandes, E. Fortunato, and R. Martins.
"
Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique
."
Materials Science and Engineering: C
. 15.1 (2001): 141-144.
Abstract
n/a
Ferreira, Isabel, Rodrigo Martins, and Elvira Fortunato.
"
Wide Band Gap Microcrystalline Silicon Thin Films
."
Solid State Phenomena
. 44 (1995): 299-346.
Abstract
n/a
Ferreira, I., Braz F. Fernandes, P. Vilarinho, E. Fortunato, and R. Martins.
"
Nanocrystalline p-type silicon films produced by hot wire plasma assisted technique
."
Materials Science and Engineering: C
. 15.1 (2001): 137-140.
Abstract
n/a
Ferreira, I., J. Carvalho, and R. Martins.
"
Undoped and doped crystalline silicon films obtained by Nd-YAG laser
."
Thin solid films
. 317.1 (1998): 140-143.
Abstract
n/a
Ferreira, Isabel, Rodrigo Martins, Pere Roca i Cabarrocas, Hugo Águas, Elvira Fortunato, and Leandro Raniero.
"
Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz
."
Materials Science Forum
. 455 (2004): 100-103.
Abstract
n/a
Ferreira, I., Braz F. Fernandes, P. Vilarinho, E. Fortunato, and R. Martins.
"
Properties of Nanocrystalline n-Type Silicon Films Produced by Hot Wire Plasma Assisted Technique
."
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
. 664 (2001): A7. 6-A7. 6.
Abstract
n/a
Ferreira, I., V. Silva, H. Aguas, E. Fortunato, and R. Martins.
"
Mass spectroscopy analysis during the deposition of a-SiC: H and aC: H films produced by hot wire and hot wire plasma-assisted techniques
."
Applied surface science
. 184.1 (2001): 60-65.
Abstract
n/a
Ferreira, I., M. E. V. Costa, L. Pereira, E. Fortunato, R. Martins, A. R. Ramos, and M. F. Silva.
"
Silicon carbide alloys produced by hot wire, hot wire plasma-assisted and plasma-enhanced CVD techniques
."
Applied surface science
. 184.1 (2001): 8-19.
Abstract
n/a
Ferreira, I., ME Costa, L. Pereira, E. Fortunato, R. Martins, A. R. Ramos, M. F. Silva, G. Foti, R. Yakimova, and M. Syväjarvi.
"
Preface xii Growth of Amorphous and Crystalline Silicon Carbide Amorphous silicon–carbon alloys: a promising but complex and very diversified series of materials I. Solomon 3 Silicon carbide alloys produced by hot wire, hot wire plasma-assisted and plasma
." (Submitted).
Abstract
n/a
Ferreira, I., R. Martins, A. Cabrita, Braz F. Fernandes, and E. Fortunato.
"
Large-Area Polycrystalline р-Туре Silicon Films Produced by the Hot Wire Technique
." (2001).
Abstract
n/a
Ferreira, I., H. Aguas, L. Mendes, F. FERNANDES, E. Fortunato, and R. Martins.
"
Influence of the H2 Dilution And Filament Temperature on the Properties of P Doped Silicon Carbide Thin Films Produced by Hot-Wire Technique
."
MRS Proceedings
. 507.1 (1998).
Abstract
n/a
Ferreira, Isabel, Bruno Brás, Nuno Correia, Pedro Barquinha, Elvira Fortunato, and Rodrigo Martins.
"
Self-rechargeable paper thin-film batteries: performance and applications
."
Display Technology, Journal of
. 6.8 (2010): 332-335.
Abstract
n/a
Ferreira, Isabel, Hugo Águas, Luı́s Mendes, and Rodrigo Martins.
"
Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films
."
Applied surface science
. 144 (1999): 690-696.
Abstract
n/a
Ferreira, I., E. Fortunato, P. Vilarinho, A. S. Viana, A. R. Ramos, E. Alves, and R. Martins.
"
Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques
."
Journal of non-crystalline solids
. 352.9 (2006): 1361-1366.
Abstract
n/a
Ferreira, Isabel, Rodrigo Martins, A. Cabrita, Hugo Águas, V. Silva, and Elvira Fortunato.
"
Silicon Films Produced by PECVD Under Powder Formation Conditions
."
Materials Science Forum
. 382 (2001): 21-30.
Abstract
n/a
Ferreira, I., and R. Martins.
"
PROPERTIES PRESENTED BY SILICON CARBIDE ALLOYS AND CARBON FILMS PRODUCED BY PECVD
."
ISDRS
. 2 (1993): 687.
Abstract
n/a
Ferreira, Isabel, Hugo Águas, Luı́s Pereira, Elvira Fortunato, and Rodrigo Martins.
"
Properties of a-Si: H intrinsic films produced by HWPA-CVD technique
."
Thin solid films
. 451 (2004): 366-369.
Abstract
n/a
Ferreira, I., H. Aguas, L. Mendes, F. FERNANDES, E. Fortunato, and R. Martins.
"
Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique
."
MRS Proceedings
. 507.1 (1998).
Abstract
n/a
Ferreira, Isabel, Rodrigo Martins, Paula M. Vilarinho, Elvira Fortunato, Ana Pimentel, Alexandra Gonçalves, Leandro Raniero, and Shibin Zhang.
"
Role of hydrogen plasma on the electrical and optical properties of indium zinc transparent conductive oxide
."
Materials science forum
. 514 (2006): 63-67.
Abstract
n/a
Ferreira, I., B. Fernandes, and R. Martins.
"
Nanocrystalline silicon carbon doped films prepared by hot wire technique
."
Vacuum
. 52.1 (1999): 147-152.
Abstract
n/a
Ferreira, I., M. E. V. Costa, E. Fortunato, and R. Martins.
"
From porous to compact films by changing the onset conditions of HW-CVD process
."
Thin solid films
. 427.1 (2003): 225-230.
Abstract
n/a
Ferreira, Isabel, Rui Igreja, Elvira Fortunato, and Rodrigo Martins.
"
Porous a/nc-Si: H films produced by HW-CVD as ethanol vapour detector and primary fuel cell
."
Sensors and Actuators B: Chemical
. 103.1 (2004): 344-349.
Abstract
n/a
Filonovich, Sergej Alexandrovich, Hugo Águas, Tito Busani, António Vicente, Andreia Araújo, Diana Gaspar, Marcia Vilarigues, Joaquim Leitão, Elvira Fortunato, and Rodrigo Martins.
"
Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B (CH3) 3
."
Science and Technology of Advanced Materials
. 13.4 (2012): 045004.
Abstract
n/a
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Recent Publications
Engineering of plasma deposition systems used for producing large area a-Si: H devices
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