Industrial rationalization represents a decisive moment of the strategic development of business activities in the last few years. In this sense, it is also a theoretical challenge to Industrial Sociology, since the dimensions, both technical and social, of that rationalization can be underlined. The analysis of the better-known different patterns of rationalization allows us a further knowledge of the main strategies for industrial modernization. Accordingly, this paper presents some results deriving from the application of those strategies. Finally, this paper gives a particular attention to the more recent tendencies of development of integrated systems of production, particularly of those focusing upon the social and organizational aspects of industrial rationalization.

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On this paper we report the physical model that supports the theory of the Flying Spot Technique (FST). Through this technique it is possible to determine separately the ambipolar diffusion length (L*) and the effective lifetime (τ*) of the generated carriers, using either Schottky diodes or quasi-ohmic sandwich structures. We also report a new static method based on the Spectral Photovoltage (SPT) that allows to infer the ambipolar diffusion length and to estimate the surface recombination velocity. © 1991 Elsevier Science Publishers B.V. All rights reserved.

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One of the main problems in producing large area amorphous silicon devices concerns films uniformity. In this paper we present data concerning the role of reactor geometry and design and on the film performances as well as the problems related to mechanical mismatches in scaling up the reactor size. © 1991 Elsevier Science Publishers B.V. All rights reserved.

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P- and n-type weakly absorbing highly conductive (σ>0·1Ω-1 cm-1) SiC thin films with similar structural and optoelectronic properties have been prepared in a two-consecutive-decomposition-deposition-chamber reactor. These films are composed of Si microcrystals (δ = 50-100 Å) embedded in an amorphous Si:0:C:H matrix, with concentrations up to 25at.%O and 20at.%C. From diffraction studies there is no evidence for the presence of SiC crystallites. Electrical conduction appears to be in extended states via percolation channels through Si crystallites of sufficient volume fraction. © 1991 Taylor & Francis Ltd.

The reduction of the In2O3 caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics. © 1991.

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A new type of non-heme iron protein was purified to homogeneity from extracts of Desulfovibrio desulfuricans (ATCC 27774) and Desulfovibrio vulgaris (strain Hildenborough). This protein is a monomer of 16-kDa containing two iron atoms per molecule. The visible spectrum has maxima at 495, 368, and 279 nm and the EPR spectrum of the native form shows resonances at g = 7.7, 5.7, 4.1 and 1.8 characteristic of a high-spin ferric ion (S = 5/2) with E/D = 0.08. Mossbauer data indicates the presence of two types of iron: an FeS4 site very similar to that found in desulforedoxin from Desulfovibrio gigas and an octahedral coordinated high-spin ferrous site most probably with nitrogen/oxygen-containing ligands. Due to this rather unusual combination of active centers, this novel protein is named desulfoferrodoxin. Based on NH2-terminal amino acid sequence determined so far, the desulfoferrodoxin isolated from D. desulfuricans (ATCC 27774) appears to be a close analogue to a recently discovered gene product from D. vulgaris (Brumlik, M.J., and Voordouw, G. (1989) J. Bacteriol. 171, 49996-50004), which was suggested to be a rubredoxin oxidoreductase. However, reduced pyridine nucleotides failed to reduce the desulforedoxin-like center of this new protein.

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