A-Si:H ambipolar diffusion length and effective lifetime measured by flying spot (FST) and spectral photovoltage (SPT) techniques

A-Si:H ambipolar diffusion length and effective lifetime measured by flying spot (FST) and spectral photovoltage (SPT) techniques

Citation:: Vieira, M., Martins Fortunato Soares Guimarães R. E. F. "A-Si:H ambipolar diffusion length and effective lifetime measured by flying spot (FST) and spectral photovoltage (SPT) techniques." Journal of Non-Crystalline Solids. 137-138 (1991): 479-482.

Abstract:

On this paper we report the physical model that supports the theory of the Flying Spot Technique (FST). Through this technique it is possible to determine separately the ambipolar diffusion length (L*) and the effective lifetime (τ*) of the generated carriers, using either Schottky diodes or quasi-ohmic sandwich structures. We also report a new static method based on the Spectral Photovoltage (SPT) that allows to infer the ambipolar diffusion length and to estimate the surface recombination velocity. © 1991 Elsevier Science Publishers B.V. All rights reserved.

Notes:

cited By 4

Rodrigo Martins

Professor @ Materials Science Department