On the structural, optical and electronic properties of microcrystalline Si:O:C:H thin films prepared in a two-consecutive-decomposition-deposition-chamber system
- Citation:
- Willeke, G.a c, Martins R. b. "On the structural, optical and electronic properties of microcrystalline Si:O:C:H thin films prepared in a two-consecutive-decomposition-deposition-chamber system." Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 63 (1991): 79-86.
Abstract:
P- and n-type weakly absorbing highly conductive (σ>0·1Ω-1 cm-1) SiC thin films with similar structural and optoelectronic properties have been prepared in a two-consecutive-decomposition-deposition-chamber reactor. These films are composed of Si microcrystals (δ = 50-100 Å) embedded in an amorphous Si:0:C:H matrix, with concentrations up to 25at.%O and 20at.%C. From diffraction studies there is no evidence for the presence of SiC crystallites. Electrical conduction appears to be in extended states via percolation channels through Si crystallites of sufficient volume fraction. © 1991 Taylor & Francis Ltd.
Notes:
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