The effect of oxygen partial pressure on the properties of In2 O3 - Ga2 O3 thin films produced by sputtering at room temperature aimed at thin film transistor (TFT) application is reported in this work. When produced in the absence of oxygen, the films are polycrystalline, while in the presence of oxygen, the films are amorphous. The films' resistivity is tuned between 10-3 and 104 γ cm. Moreover, the films present a high transmittance (> 80%) and a smooth surface (rrms =1.2 nm). The high performance as-produced transistors present high saturation mobility (μsat ≈43 cm2 /V s) and a subthreshold gate-voltage swing of 0.51 V/dec, which is reduced to 0.27 V/dec after 150°C annealing. © 2009 The Electrochemical Society.

Molybdenum (0-1 at. %) doped indium oxide thin films with high near-infrared (NIR) transparency and high carrier mobility were deposited on Corning-1737 glass substrates at 400 °C by a spray pyrolysis experimental technique. X-ray diffraction (XRD) analysis confirmed the cubic bixbyite structure of indium oxide. The preferred growth orientation along the (222) plane for the low Mo doping level (0.5 at. %) shifts to (400) for higher Mo doping levels (<0.6 at. %). The crystallite size extracted from the XRD data corroborates the changes in full width at half maximum due to the variation in Mo doping. A scanning electron microscopy study illustrated the evolution in the surface microstructure as a function of Mo doping. The negative sign of the Hall coefficient confirmed the n -type conductivity. A high carrier mobility of ∼122.4 cm2 /V s, a carrier concentration of ∼9.5× 1019 cm-3, a resistivity of ∼5.3× 10-4cm, and a high figure of merit of ∼4.2× 10-2 -1 are observed for the films deposited with 0.5 at. % Mo. The obtained high average transparency of ∼83% in the wavelengths ranging from 400 to 2500 nm confirmed the extension of transmittance well into the NIR region. © 2009 American Institute of Physics.

Molybdenum-doped indium oxide (IMO) thin films were deposited at 450 °C for varying molybdenum concentrations in the range of 0.5-2 at% by the spray pyrolysis technique. These films confirmed the cubic bixbyite structure of polycrystalline In2O3. The preferred growth orientation along the (2 2 2) plane shifts to (4 0 0) on higher Mo doping levels. The films doped with 0.5 at% Mo showed high mobility of 76.9 cm2/(V s). The high visible transmittance extends well into the near-infrared region. A possibility of using the produced IMO films in nanocrystalline (nc) silicon solar cell applications is discussed in this article. The morphological studies showed a change in the microstructure, which is consistent with the change in crystallographic orientation. © 2008 Elsevier B.V. All rights reserved.

In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure (≥4 mbar), high plasma power and low substrate temperature (≤200 °C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystalline silicon thin films with very high crystallinity, high value of dark conductivity (>7 (Ω cm)-1) and high optical band gap (≥1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanism should proceed through a sub-surface layer mechanism that leads to silicon crystallization. The obtained films are very good candidates for application in amorphous and nanocrystalline silicon solar cells as a p-type window layer. © 2009 Elsevier Ltd. All rights reserved.

Indium molybdenum oxide thin films were deposited using different radio-frequency sputtering units on glass substrates at room temperature from an In 2O 3 (95 wt.%): Mo (5 wt.%) target. The film thickness ranges between 160 and 275 nm. The chamber volume of Unit-1 was ̃2.4 times larger than that of Unit-2. Apart from the chamber volume, a significant difference between the two units was the sputtering pressure. The films were characterized by their structural, morphological, optical, and electrical properties. A strong reflection from (222) plane was obtained for the ̃275 nm thick films deposited in Unit-1. The films deposited with <275 nm thickness and those deposited in Unit-2 are close to amorphous with a small crystalline fraction. The surface of the films deposited in Unit-1 is comprised of randomly arranged crystallites, which is restructured with the increasing film thickness to become a well defined "rice field" like structure (275 nm thick). The films deposited in Unit-2 are comprised of many holes on the surface that is presumably due to back sputtering. The average visible transmittance calculated in the wavelength between 400 and 800 nm ranges from 70 to 82%. The optical band gap is found to vary between 3.80 and 3.86 eV. The lowest bulk resistivity of the films deposited in Unit-1 was increased from ̃4.06×10 -3 to 4.07×10 -1ωcm when deposited in Unit-2. The carrier concentration was decreased from 1.31×10 20 to 1.03×10 18 cm -3 but the Hall mobility increased from 11.7 to 15.0 cm2 V -1 s -1. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

ZnO films were deposited on c-plane sapphire substrates in Ar atmosphere by ii magnetron sputtering and were post-annealed at 400°C in green gas (95% N2 + 5% H2). The properties of the as-grown and annealed films have been characterized by X-ray diffraction (XRD), Rutherford backscattering (RBS), elastic recoil detection analysis (ERDA), Hall measurement and photoluminescence spectra. XRD studies confirmed the variation in strain and an improvement in crystallinity. From RBS and ERDA analysis, the presence of H atoms on the surface of the as-grown ZnO films was evidenced. Annealing in green gas increased the amount of H in the film. Compared with the as-grown films, the ultra exciting intensity obviously decreases in the annealed films and new optical active centres in the blue/violet ( 3.0 eV) and red ( 1.9) regions are emerged in the PL spectrum. The positive sign of Hall coefficient confirmed the low (-type conductivity in the as grown films, which was improved after annealing. However, the (-type conductivity was not stable, especially for the annealed sample it changes from ( type to n type after 9 days. Copyright © 2009 American Scientific Publishers All rights reserved.

The isolation and characterization of a new metalloprotein containing Cu and Fe atoms is reported. The as-isolated Cu-Fe protein shows an UV-visible spectrum with absorption bands at 320 nm, 409 nm and 615 nm. Molecular mass of the native protein along with denaturating electrophoresis and mass spectrometry data show that this protein is a multimer consisting of 14 +/- 1 subunits of 15254.3 +/- 7.6 Da. Mossbauer spectroscopy data of the as-isolated Cu-Fe protein is consistent with the presence of [2Fe-2S](2+) centers. Data interpretation of the dithionite reduced protein suggest that the metallic cluster could be constituted by two ferromagnetically coupled [2Fe-2S](+) spin delocalized pairs. The biochemical properties of the Cu-Fe protein are similar to the recently reported molybdenum resistance associated protein from Desulfovibrio, D. alaskensis. Further-more, a BLAST search from the DNA deduced amino acid sequence shows that the Cu-Fe protein has homology with proteins annotated as zinc resistance associated proteins from Desulfovibrio, D. alaskensis, D. vulgaris Hildenborough, D. piger ATCC 29098. These facts suggest a possible role of the Cu-Fe protein in metal tolerance. (C) 2009 Published by Elsevier Inc.

The characterization of a novel Mo-Fe protein (MorP) associated with a system that responds to Mo in Desulfovibrio alaskensis is reported. Biochemical characterization shows that MorP is a periplasmic homomultimer of high molecular weight (260 +/- 13 kDa) consisting of 16-18 monomers of 15321.1 +/- 0.5 Da. The UV/visible absorption spectrum of the as-isolated protein shows absorption peaks around 280, 320, and 570 nm with extinction coefficients of 18700, 12800, and 5000 M(-1) cm(-1), respectively. Metal content, EXAFS data and DFT calculations support the presence of a Mo-2S-[2Fe-2S]-2S-Mo cluster never reported before. Analysis of the available genomes from Desulfovibrio species shows that the MorP encoding gene is located downstream of a sensor and a regulator gene. This type of gene arrangement, called two component system, is used by the cell to regulate diverse physiological processes in response to changes in environmemtal conditions. Increase of both gene expression and protein production was observed when cells were cultured in the presence of 45 mu M molybdenum. Involvement of this system in Mo tolerance of sulfate reducing bacteria is proposed.

This paper reports the performance of small area solar cells, 128 linear integrated position sensitive detector arrays and thin film transistors based on nanostructured silicon thin films produced by plasma-enhanced chemical vapour deposition technique, close to the onset of dusty plasma conditions, within the transition region from amorphous to microcrystalline. The small area solar cells, produced in a modified single chamber reactor, exhibited very good electrical characteristics with a conversion efficiency exceeding 9%. The 128 integrated position sensitive detector arrays, based on a similar pin structure, allow real-time 3D object imaging with a resolution higher than 90 l p/mm. The thin film transistors produced exhibited field effect mobility of 2.47 cm 2/V/s, threshold voltage of 2 V, on/off ratio larger than 10 7 and sub-threshold slopes of 0.32 V/decade, which are amongst the best results reported for this type of device. © 2009 Taylor & Francis.