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A theoretical study of the all two-photon transitions from initial bound states with ni=2,3 in hydrogenic ions is presented. High-precision values of relativistic decay rates for ions with nuclear charge in the range 1<=Z<=92 are obtained through the use of finite basis sets for the Dirac equation constructed from B splines. We also report the spectral (energy) distributions of several resonant transitions, which exhibit interesting structures, such as zeros in the emission spectrum, indicating that two-photon emission is strongly suppressed at certain frequencies. We compare two different approaches (the line profile approach and the QED approach based on the analysis of the relativistic two-loop self-energy) to regularize the resonant contribution to the decay rate. Predictions for the pure two-photon contributions obtained in these approaches are found to be in good numerical agreement.

A theoretical study of the all two-photon transitions from initial bound states with ni=2,3 in hydrogenic ions is presented. High-precision values of relativistic decay rates for ions with nuclear charge in the range 1<=Z<=92 are obtained through the use of finite basis sets for the Dirac equation constructed from B splines. We also report the spectral (energy) distributions of several resonant transitions, which exhibit interesting structures, such as zeros in the emission spectrum, indicating that two-photon emission is strongly suppressed at certain frequencies. We compare two different approaches (the line profile approach and the QED approach based on the analysis of the relativistic two-loop self-energy) to regularize the resonant contribution to the decay rate. Predictions for the pure two-photon contributions obtained in these approaches are found to be in good numerical agreement.

This paper describes the theoretical and experimental results achieved in optimizing the application of the series loaded series resonant converter for contactless energy transfer. The main goal of this work is to define the power stage operation mode that guarantees the highest possible efficiency. The results suggest a method to select the physical parameters (operation frequency, characteristic impedance, transformer ratio, etc.) to achieve that efficiency improvement. The research clarifies also the effects of the physical separation between both halves of the ferromagnetic core on the characteristics of the transformer. It is shown that for practical values of the separation distance, the leakage inductance, being part of the resonant inductor, remains almost unchanged. Nevertheless, the current distribution between the primary and the secondary windings changes significantly due to the large variation of the magnetizing inductance. An approximation in the circuit analysis permits to obtain more rapidly the changing values of the converter parameters. The analysis results in a set of equations which solutions are presented graphically. The graphics show a shift of the best efficiency operation zone, compared to the converter with an ideally coupled transformer. Experimental results are presented confirming that expected tendency.

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Indium molybdenum oxide (IMO) thin films were deposited by RF magnetron sputtering on glass substrates at room temperature. The deposition and argon partial pressures were maintained at 6.0 × 10-1 Pa and 3.0 × 10-1 Pa, respectively. The oxygen partial pressure (OPP) was varied in the range 1.0-6.0 × 10-3 Pa. The films were sputtered at 40 W for 30 min using the target consisted In2O3 (98 wt%): Mo (2 wt%). The films are polycrystalline with a slight preferential orientation along (2 2 2) plane. The crystallinity is increased with the increasing OPP. The negative sign of Hall coefficient confirmed the n-type conductivity. A maximum mobility ∼19 cm2 V-1 s-1 is obtained for the films deposited with OPP of 3.6 × 10-3 Pa. The average visible transmittance calculated in the wavelength ranging 500-800 nm is ranging between 2% and 77%. The optical band gap calculated from the absorption data is varied between 3.69 and 3.91 eV. A striking feature is that the work function of the films is wide ranging 4.61-4.93 eV. A possibility of using the produced IMO films as transparent conducting oxide in photovoltaic applications such as organic solar cells is discussed in this article. © 2008 Elsevier Ltd. All rights reserved.

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Hafnium oxide-aluminum oxide (HfAlO) dielectric films were cosputtered using HfO2 and Al2 O3 targets, and their properties are studied in comparison with pure HfO2 films. The X-ray diffraction studies confirmed that the HfO2 films are nanocrystalline with a monoclinic phase. The as-deposited HfAlO films with a chemical composition of (HfO2) 0.86 (Al2 O3) 0.14 are amorphous even after annealing at 500°C. Further, the cosputtered films show a slight reduction in leakage current. The leakage current density may be significantly reduced below 3× 10-10 A cm-2 at an electric field of 0.25 MV/cm when applying the proper radio-frequency bias to the substrate. © 2009 The Electrochemical Society.

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Here we report the performance of a selective floating gate (V GS) n-type non-volatile memory paper field-effect transistor. The paper dielectric exhibits a spontaneous polarization of about 1 mCm-2 and GIZO and IZO amorphous oxides are used respectively as the channel and the gate layers. The drain and source regions are based in continuous conductive thin films that promote the integration of fibres coated with the active semiconductor. The floating memory transistor writes, reads and erases the stored information with retention times above 14500 h, and is selective (for VGS > 5 ± 0.1 V). That is, to erase stored information a symmetric pulse to the one used to write must be utilized, allowing to store in the same space different information. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Molybdenum doped (0-1 at. %) indium oxide thin films with high near infrared (NIR) transparency and carrier mobility were deposited on Corning-1737 glass substrates at 400 °C by spray pyrolysis experimental technique. Films with mobility as high as ∼149 cm2 /V s were obtained when annealed in vacuum at 550 °C, which also possess carrier concentration of ∼1× 1020 cm-3 and resistivity as low as ∼4.0× 10-4 cm. Further, both the average visible transmittance (500-800 nm) and the average NIR transmittance are >83%. This clearly shows that the transmittance is extended well into the NIR region. © 2009 American Institute of Physics.