Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure | Hugo Águas

Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure

Citation:: Filonovich, SA, H. Aguas, I. Bernacka-Wojcik, C. Gaspar, M. Vilarigues, LB Silva, E. Fortunato, and R. Martins. "Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure." Vacuum. 83 (2009): 1253-1256.

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