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This document describes a work-in-progress development of NGen-VM, a distributed infrastructure that manages execution environments with run-time and programming language support targeting applications developed in the Java programming language, deployed over clusters of many-core computers. For each running application or suite of related applications, a dedicated single-system image will be provided, regardless of the concurrent threads running on a single machine (on several cores) or scattered on different computers. Such system images rely on a single model for concurrency management (Transactional Shared Memory Model), in order fill the gap between the hardware infrastructure of clusters of many-core nodes and the application runtime that is independent from that hardware infrastructure. Interactions between threads in the same tasks will be supported by a Transactional Memory framework that provides the programming language with Atomic and Isolated code regions. Interactions between thread on different machines will also use the Transactional Memory model, but now resorting to a Distributed Shared Memory abstraction.

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This paper addresses the problem of finding an optimal correction of an inconsistent linear system, where only the nonzero coefficients of the constraint matrix are allowed to be perturbed for reconstructing a consistent system. Using the Frobenius norm as a measure of the distance to feasibility, a nonconvex minimization problem is formulated, whose objective function is a sum of fractional functions. A branch-and-bound algorithm for solving this nonconvex program is proposed, based on suitably overestimating the denominator function for computing lower bounds. Computational experience is presented to demonstrate the efficacy of this approach.

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The effect is considered of order and disorder on the electrical and optical performance of ionic oxide semiconductors used to produce optoelectronic devices such as p-n heterojunction solar cells and thin-film transistors (TFTs). The results obtained show that p-type c-Si/a-IZO/poly-ZGO solar cells exhibit efficiencies above 14% in device areas of about 2.34 cm2, whereas amorphous oxide TFTs based on the Ga-Zn-Sn-O system demonstrate superior performance to the polycrystalline ZnO TFTs, with ION/I OFF ratio exceeding 107, turn-on voltage below 1-2 V and saturation mobility above 25 cm2 V-1 s-1. In addition, preliminary data on a p-type oxide TFT based on the Zn-Cu-O system are presented. © 2009 Taylor & Francis.

The aim of this research is to study the role of concentration variations on precursor solution of nitrogen doped ZnO (ZnO:N) thin films which has been prepared by spray pyrolysis technique. SEM micrographs show that ZnO:N films in 0.1 ML concentration have a mono-disperse surface with nano-spheres of 50 nm in diameter. In higher molarities the nano-spheres agglomerate leading to particle formation. For 0.4 ML concentrations this change is observed, where plume like particles are seen over the surface of ZnO:N thin film. This change corresponds also to changes observed in the XRD spectra, where crystal orientation of ZnO:N thin films changes from (002) to (100). All of the ZnO:N thin films have kept their sharp ultra violet absorption edge, but the transparency in visible spectra region decreases as the molarities in precursor solution increase. Photoluminescence spectra at room temperature revealed emissions at 2.33 eV, 2.54 eV and 3.16 eV that can be attributed to the presence of nitrogen in ZnO structure. We also observe that all samples analyzed show a p-type Hall effect behavior, and that as the molarities in the precursor solution increase, the electrical resistivity of the films decreases, due to an enhancement of free carriers, while the mobility decreases. These data prove the capability of spray pyrolysis as a viable technique in preparing p-type TCO materials and so, fully transparent CMOS-like devices. © 2009 Elsevier B.V. All rights reserved.

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In this paper we report the use of a sheet of cellulose fiber-based paper as the dielectric layer used in oxide based semiconductor thin film field-effect transistors (FETs). In this new approach we are using the cellulose fiber-based paper in an "interstate" structure since the device is build on both sides of the cellulose sheet. Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (>30 cm 2/Vs), drain-source current on/off modulation ratio of approximately 104, near-zero threshold voltage, enhancement n-type operation and sub-threshold gate voltage swing of 0.8 V/decade. The cellulose fiber-based paper FETs characteristics have been measured in air ambient conditions and present good stability. The obtained results outpace those of amorphous Si TFTs and rival with the same oxide based TFTs produced on either glass or crystalline silicon substrates. The compatibility of these devices with large-scale/large-area deposition techniques and low cost substrates as well as their very low operating bias delineates this as a promising approach to attain high-performance disposable electronics like paper displays, smart labels, smart packaging, RFID and point-of-care systems for self analysis in bio-applications, among others. © 2009 SPIE.

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High performance transparent thin-film transistors deposited on glass substrates and entirely processed at a low temperature not exceeding 150°C are presented and analyzed in this paper. Besides being based on an amorphous oxide semiconductor, the main innovation of this work relies on the use of sputtered multicomponent oxides as dielectric materials based on mixtures of Ta2O5 with SiO2 or Al2O3. These multicomponent dielectrics allow to obtain amorphous structures and low leakage currents while preserving a high dielectric constant. This results in transistors with remarkable electrical properties, such as field-effect mobility exceeding 35 cm2 V-1 s-1, close to 0 V turn-on voltage, on/off ratio higher than 106, and a subthreshold slope of 0.24 V decade-1, obtained with a Ta2O5: SiO2 dielectric. When subjected to severe current stress tests, optimized devices show little and reversible variation in their electrical characteristics. The devices presented here have properties comparable to the ones using plasma-enhanced chemical vapor deposited SiO2 at 400°C, reinforcing the success of this amorphous multicomponent dielectric approach for low temperature, high performance, and transparent electronic circuits. © 2009 The Electrochemical Society.

Plants are often subjected to periods of soil and atmospheric water deficits during their life cycle as well as, in many areas of the globe, to high soil salinity. Understanding how plants respond to drought, salt and co-occurring stresses can play a major role in stabilizing crop performance under drought and saline conditions and in the protection of natural vegetation. Photosynthesis, together with cell growth, is among the primary processes to be affected by water or salt stress. The effects of drought and salt stresses on photosynthesis are either direct (as the diffusion limitations through the stomata and the mesophyll and the alterations in photosynthetic metabolism) or secondary, such as the oxidative stress arising from the superimposition of multiple stresses. The carbon balance of a plant during a period of salt/water stress and recovery may depend as much on the velocity and degree of photosynthetic recovery, as it depends on the degree and velocity of photosynthesis decline during water depletion. Current knowledge about physiological limitations to photosynthetic recovery after different intensities of water and salt stress is still scarce. From the large amount of data available on transcript-profiling studies in plants subjected to drought and salt it is becoming apparent that plants perceive and respond to these stresses by quickly altering gene expression in parallel with physiological and biochemical alterations; this occurs even under mild to moderate stress conditions. From a recent comprehensive study that compared salt and drought stress it is apparent that both stresses led to down-regulation of some photosynthetic genes, with most of the changes being small (ratio threshold lower than 1) possibly reflecting the mild stress imposed. When compared with drought, salt stress affected more genes and more intensely, possibly reflecting the combined effects of dehydration and osmotic stress in salt-stressed plants.

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The authors report on the performance of polymer-based light-emitting diodes, LEDs, using amorphous zinc oxide-doped indium oxide, IZO, as anode. In particular, LEDs with poly[(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] as electroluminescent layer and aluminium cathodes, show higher efficiency with this IZO anode (0.015 cd/A) than with indium-tin oxide (ITO) (0.010 cd/A). Inspite of the higher resistance of this IZO electrode, compared with ITO, the fact that it can be processed at lower temperatures and allows similar or even higher efficiency values for polymer LEDs make this material a good candidate for display and other optoelectronic applications. © 2009 Elsevier B.V. All rights reserved.

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The most important processes for the creation of S12+ to S14+ ions excited states from the ground configurations of S9+ to S14+ ions in an electron cyclotron resonance ion source, leading to the emission of K x-ray lines, are studied. Theoretical values for inner-shell excitation and ionization cross sections, including double-KL and triple-KLL ionizations, transition probabilities and energies for the de-excitation processes, are calculated in the framework of the multiconfiguration Dirac-Fock method. With reasonable assumptions about the electron energy distribution, a theoretical Kalpha x-ray spectrum is obtained, which is compared to recent experimental data.

The most important processes for the creation of S12+ to S14+ ions excited states from the ground configurations of S9+ to S14+ ions in an electron cyclotron resonance ion source, leading to the emission of K x-ray lines, are studied. Theoretical values for inner-shell excitation and ionization cross sections, including double-KL and triple-KLL ionizations, transition probabilities and energies for the de-excitation processes, are calculated in the framework of the multiconfiguration Dirac-Fock method. With reasonable assumptions about the electron energy distribution, a theoretical Kalpha x-ray spectrum is obtained, which is compared to recent experimental data.

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