Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility
- Citation:
- Parthiban, S.a, Ramamurthi Elangovan Martins Fortunato K. a E. b. "Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility." Applied Physics Letters. 94 (2009).
Abstract:
Molybdenum doped (0-1 at. %) indium oxide thin films with high near infrared (NIR) transparency and carrier mobility were deposited on Corning-1737 glass substrates at 400 °C by spray pyrolysis experimental technique. Films with mobility as high as ∼149 cm2 /V s were obtained when annealed in vacuum at 550 °C, which also possess carrier concentration of ∼1× 1020 cm-3 and resistivity as low as ∼4.0× 10-4 cm. Further, both the average visible transmittance (500-800 nm) and the average NIR transmittance are >83%. This clearly shows that the transmittance is extended well into the NIR region. © 2009 American Institute of Physics.
Notes:
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