Rodrigo Martins

Citation:

Elangovan, E., Gonçalves Martins Fortunato G. R. E. "RF sputtered wide work function indium molybdenum oxide thin films for solar cell applications." Solar Energy. 83 (2009): 726-731.

Abstract:

Indium molybdenum oxide (IMO) thin films were deposited by RF magnetron sputtering on glass substrates at room temperature. The deposition and argon partial pressures were maintained at 6.0 × 10-1 Pa and 3.0 × 10-1 Pa, respectively. The oxygen partial pressure (OPP) was varied in the range 1.0-6.0 × 10-3 Pa. The films were sputtered at 40 W for 30 min using the target consisted In2O3 (98 wt%): Mo (2 wt%). The films are polycrystalline with a slight preferential orientation along (2 2 2) plane. The crystallinity is increased with the increasing OPP. The negative sign of Hall coefficient confirmed the n-type conductivity. A maximum mobility ∼19 cm2 V-1 s-1 is obtained for the films deposited with OPP of 3.6 × 10-3 Pa. The average visible transmittance calculated in the wavelength ranging 500-800 nm is ranging between 2% and 77%. The optical band gap calculated from the absorption data is varied between 3.69 and 3.91 eV. A striking feature is that the work function of the films is wide ranging 4.61-4.93 eV. A possibility of using the produced IMO films as transparent conducting oxide in photovoltaic applications such as organic solar cells is discussed in this article. © 2008 Elsevier Ltd. All rights reserved.

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