Room-temperature cosputtered HfO2 - Al2 O3 multicomponent gate dielectrics
- Citation:
- Pei, Z.L.a, Pereira Goņalves Barquinha Franco Alves Rego Martins Fortunato L. a G. a. "Room-temperature cosputtered HfO2 - Al2 O3 multicomponent gate dielectrics." Electrochemical and Solid-State Letters. 12 (2009): G65-G68.
Abstract:
Hafnium oxide-aluminum oxide (HfAlO) dielectric films were cosputtered using HfO2 and Al2 O3 targets, and their properties are studied in comparison with pure HfO2 films. The X-ray diffraction studies confirmed that the HfO2 films are nanocrystalline with a monoclinic phase. The as-deposited HfAlO films with a chemical composition of (HfO2) 0.86 (Al2 O3) 0.14 are amorphous even after annealing at 500°C. Further, the cosputtered films show a slight reduction in leakage current. The leakage current density may be significantly reduced below 3× 10-10 A cm-2 at an electric field of 0.25 MV/cm when applying the proper radio-frequency bias to the substrate. © 2009 The Electrochemical Society.
Notes:
cited By 15
Recent Publications
