This study was produced for the “Study of Instruments and Tools to anticipate the effects of industrial change on employment, trades and vocational qualifications” and for DG V (Employment) of the European Commission in the late 1994. It started when the previous Portuguese government was still ruling, the main policies were defined, and the available instruments were not used in a minimum extend. The new Government, issued from the 1995 elections, proposed “employment” as a major objective with horizontal responsibility. That’s also why there is now a Ministry for Qualifications and Employment, and another one for Solidarity and Social Affairs, not one for Employment and Social Affairs as the previous Government had. But more than that, this objective is considered to need a coordinated and consistent action that involves external affairs, industrial and regional policies, and the policies on education, training and employment, among others. The promotion of the “quality of employment” is being recently done at the working conditions, remuneration, social protection, occupational promotion levels, and the equality of opportunities towards employment and vocational training levels, and finally, the levels of qualification of human resources for a better labour market, education policy and training policy developments. In Portugal, the influence of the industrial change is produced in a top-down way; with (in some cases) an ex post analysis process to formulated training needs. This means that the industrial change impact is produced (normally, unexpectedly), and afterwards the responsible at the company level tries to know which training needs should be formulated in order those effects could be the smoother possible. The training needs at the company level is not based on anticipatory studies, neither is done any long term forecast on qualification, or even employment level.

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A survey of Hemidactylus turcicus L. (Reptilia, Gekkonidae) was carried out from March to October
of 1996, in temporally limited transects, using quadrats of 160x160 meters, in the World Heritage site
of Évora. Occasional observations were also made in 1995 and 1996. Hemidactylus turcicus is
common in the sampled area, occurring in 56% of the quadrats, and prefers quiet streets. The species
Tarentola mauritanica was not observed in Évora but it appears 10 Km to the Southwest of this town.
Diurnal activity and winter activity were not observed.

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The aim of this work is to present a model to interpret the static and the dynamic detection and resolution limits of 1D thin film position sensitive detectors based on p-i-n a-Si:H devices. The model can determine the device characteristics that influence the spatial limits and the response time of the device.

SPROUT is a computer program for the rational design of molecules for a range of applications in molecular recognition. Molecular graphs are built in a stepwise fashion by subgraph addition. Several heuristics are being explored to restrict the combinatorial explosion that is inherent in structure generation. These include the use of generalized molecular fragments, called templates, as building blocks. Structure generation consists of two stages: (i) the generation of skeletons from templates that satisfy steric constraints and (ii) the substitution of heteroatoms into skeletons to produce molecules that satisfy other constraints such as electrostatics. The choice and definition of the templates and template joining rules are described together with a description of the atom substitution process.

This new chapter of the PhD thesis was an addition to the presented already material at TU Sofia, Bulgaria. This was necessary to obtain the permission to prepare the thesis for its final version. Unfortunatelly this thesis was never presented but it served for the core to the presented in IST, Portugal, later on.

The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

The introduction into a traditional p.i.n. structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer (`i-layer'), grown at a higher power density, present a high density of the defects and acts as `gettering centers' able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 1016 eV-1 cm-3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution. We report here about a device numerical simulation that allows us to analyze the influence of the `i- layer' position, thickness and density of states on the a-Si:H solar cells performances. Results of some systematic simulation rom the ASCA program (Amorphous Solar Cell Analysis), and for different configurations will be presented.

The aim of this work is to provide the basis for the interpretation of the lateral photoeffect in p-i-n a-Si:H one-dimensional thin-film position-sensitive detectors (1D TFPSDs) under steady state, through an analytical model. The experimental data recorded in 1D TFPSD devices with different characteristics are compared with the predicted curves and the obtained correlations are discussed. © 1996.

This work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].

Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as-deposited film is about 1.3×10-1 Ω* cm and decreases down to 6.9×10-3 Ω* cm as the annealing temperature is increased up to 500°C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as deposited film is about 1.3 × 10-1 gW*cm and decreases down to 6.9 × 10-3 Ω*cm as the annealing temperature is increased up to 500 °C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping. © 1995.

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Silicon oxycarbide microcrystallinc layers, n- and p-doped, highly conductive and highly transparent have been produced using a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system. The films exhibit suitable properties for optoelectronic applications where wide band gap materials with required conductivity and stability are needed. In this paper we present the role of partial oxygen pressure (po2) in controlling the composition, structure and transport properties (conductivity. δd and optical gap, Eop) of silicon oxycarbide microcrystalline layers. © 1994 Materials Research Society.

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