The notion of the Abelian kernel of a finite monoid is a generalization of that of the derived subgroup of a finite group. A monoid $M$ is then called solvable if its chain of Abelian kernels terminates with the submonoid of $M$ generated by its idempotents. The main result of this paper is that the finite idempotent commuting monoids bearing this property are precisely those whose subgroups are solvable. In particular any finite aperiodic monoid is Abelian-solvable in this sense. A generalization of the main result of this paper has been published [in Int. J. Algebra Comput. 14, No. 5-6, 655-665 (2004; Zbl 1081.20067)] by the authors and ıt S. Margolis and ıt B. Steinberg.

Space charge in electrically aged cross-linked polyethylene (XLPE) was studied using a procedure combining isothermal and non-isothermal measurements of charge and discharge currents. Aging is carried out using an AC field while immersing the disk-shaped samples in an ionic aqueous solution at constant temperature. After aging the samples were isothermally DC charged and discharged. Next a non-isothermal experiment with constant heating rate was performed (FTSDC). Finally the sample was kept at the highest temperature in order to completely discharge the polymer. The space charge introduced in the XLPE during aging can be analyzed from the study of the FTSDC spectra. The thermogram (FTSDC) shows a very broad peak. The peak is attributed to trapped space charge in traps with long relaxation times. It is possible to decompose it into three or four individual peaks and obtain the corresponding activation energies. The results were compared with previous ones obtained for LDPE (low density polyethylene) aged under similar conditions.

High-quality SrBi2Nb2O9 (SBN) single crystals were grown from a melt using a high-temperature self-flux solution method and Bi2O3 added with B2O3 as a flux. A suitable thermal profile involving slow cooling rates allowed growing large and translucent SBN crystals exhibiting platelet morphology with typical size ∼5 × 5 mm2 and thickness approximately 400 μm. X-ray diffraction revealed a dominant (001)-orientation of the major face of the platelet crystals and edges oriented parallel to the [110] directions. The dielectric properties were evaluated along the ab-plane and in the c-axis direction. The ferro-paraelectric phase transition was observed at TC = 440°C with Curie-Weiss relationship above TC. The anisotropy of dielectric permittivity, i.e., the ratio between permittivity in the ab-plane and along c-axis was about 10 at TC-The obtained results are used to discuss the observed correlations between anisotropy, crystalline orientation, and electrical properties.

This work deals with the study of the role of the buffer layers thickness on the TCO/p-a-SiC:H/buffer1/buffer2/i(nc-Si/a-Si:H)/n-a- Si:H/Al solar cell I-V and impedance performances. The aim was to improve the p/i interface region, which has a large influence on the solar cell characteristics and stability. In order to match the difference between the p and i layers optical gaps, the buffer layers were deposited using, for each layer, different methane to silane mixtures, aiming to obtain a gradual match of the corresponding optical gaps. The intrinsic layer was deposited at high hydrogen dilution rates at 27.12 MHz in conditions that allowed the incorporation of nanoparticles/nanoclusters. Solar cells with fill factor of 0.63; open circuit voltage of 0.93 Volts; short circuit current density of 16.13 mA/cm2 and an efficiency of 9.4% were produced with buffer layers around 1.3 nm thick. When comparing these solar cells with conventional amorphous silicon solar cells we notice that the quantum efficiency from ultraviolet to green regions is improved up to 13%, in average. Concerning solar cell capacitance, the data show that the best solar cells exhibit the highest capacitance, meaning that the films are compact and dense, in-line with the other electrical characteristics obtained. ©2005 IEEE.

This work reports on the fabrication process and performances presented by metal insulator semiconductor (MIS) linear position sensitive detectors (PSD) with an active length of 6 cm. The use of long sensitive areas allows the PSD to achieve higher resolution without the need of a highly accurate light spot integration mechanism. The PSD is built in a multilayered structure consisting of Cr/a-Si:H (n+ doped)/a-Si:H (intrinsic)/SiOx (passivation layer)/Au, where the active a-Si:H layers were deposited by a modified triode plasma enhanced chemical vapour deposition (MTPECVD), which allows the deposition of highly electronic grade material with a low (≈ × 1015 cm-3) defect density inferred by CPM. The sensor linearity and sensitivity shows dependence on the sensor width to length ratio and on the value of load resistance. Sensitivities of more than 30 mV/cm were achieved with linearity near 99%. Besides that, this type of MIS structure allows an improved spectral response near the UV region and has the maximum response at 540 nm. © 2004 Published by Elsevier B.V.