The aim of this work is to present experimental data concerning the role of the oxygen partial pressure during the production process on the properties (structure, morphology, composition, and transport properties) exhibited by doped microcrystalline silicon oxycarbide films. The films were produced by a two consecutive decomposition and deposition chamber system, where a spatial separation between the plasma and the growth regions is achieved. The films produced by this technique are highly conductive and highly transparent with suitable properties for optoelectronic applications requiring wide band-gap and low-conductivity materials. © 1995, American Vacuum Society. All rights reserved.

The aim of this work is to interpret the role of the lateral leakage current on the a-Si:H solar cell performances (J-V characteristics, responsivity and the apparent device degradation behaviour), under low illumination conditions.

PIN solar cells were light soaked up to 60 hours. The cell characteristics, the optoelectronic properties and the microstructure parameter (R = I2100/I2100+I2000) as well as the hydrogen content (CH) and density of states (g(Ef)) of the active i-layer were monitored throughout the entire light induced degradation process and compared with the correspondents μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Data show a strong correlation between the decrease of μτ product for electron and the increase of the fraction of hydrogen bonded on internal surfaces (R increases from 0.1 to 0.4) suggesting structural changes during the light induced defects' formation. For holes, the μτ product remains approximately constant and only dependent on the initial hydrogen content. As g(Ef) increases, μτ presents an asymmetrical decrease showing that electrons are more sensitive to defects' growth than holes. We also observe that the rate of degradation is faster for samples having the lowest defect densities, R and CH, showing that the amount of degradation is not a simple function of the photon exposure (Gt product) but also depends on the material microstructure.

Industrial rationalization represents a decisive moment of the strategic development of business activities in the last few years. In this sense, it is also a theoretical challenge to Industrial Sociology, since the dimensions, both technical and social, of that rationalization can be underlined. The analysis of the better-known different patterns of rationalization allows us a further knowledge of the main strategies for industrial modernization. Accordingly, this paper presents some results deriving from the application of those strategies. Finally, this paper gives a particular attention to the more recent tendencies of development of integrated systems of production, particularly of those focusing upon the social and organizational aspects of industrial rationalization.

Amorphous Silicon solar cells have been produced by a two consecutive decomposition and deposition chamber system, using polished S. S. substrates. Through a systematic investigation of the electrical and optical properties of doped and undoped amorphous silicon layers (1) we observe that the deposition conditions (gas partial pressure, density of r. f. power, substrate temperature, electromagnetic static fields applied to the substrate, and gas flow rate) influence films properties. In the course of this investigation we have been studying the role of the sheet resistance, R//s, of the I. T. O. layer on the short circuit current, I//s//c, and on the open circuit voltage, V//o//c, of p. i. n. structures of 16cm**2 in area. The obtained results indicate that V//o//c is almost independent on R//s, while I//s//c variation approaches a square root dependence on R//s.