Energies and transition probabilities of Kβ hypersatellite lines are computed using the Dirac–Fock model for several values of Z throughout the periodic table. The influence of the Breit interaction on the energy shifts from the corresponding diagram lines and on the Kβh1/Kβh3 intensity ratio is evaluated. The widths of the double-K hole levels are calculated for Al and Sc. The results are compared to experiment and to other theoretical calculations.Al_Sc_Mg_Ti

Energies and transition probabilities of Kβ hypersatellite lines are computed using the Dirac–Fock model for several values of Z throughout the periodic table. The influence of the Breit interaction on the energy shifts from the corresponding diagram lines and on the Kβh1/Kβh3 intensity ratio is evaluated. The widths of the double-K hole levels are calculated for Al and Sc. The results are compared to experiment and to other theoretical calculations.

Total electronic correlation corrections to the binding energies of the isoelectronic series of beryllium, neon, magnesium and argon, are calculated in the framework of relativistic multiconfiguration Dirac-Fock method. Convergence of the correlation energies is studied as the active set of orbitals is increased. The Breit interaction is treated fully self-consistently. The final results can be used in the accurately determination of atomic masses from highly charged ions data obtained in Penning-trap experiments.

Total electronic correlation corrections to the binding energies of the isoelectronic series of beryllium, neon, magnesium and argon, are calculated in the framework of relativistic multiconfiguration Dirac-Fock method. Convergence of the correlation energies is studied as the active set of orbitals is increased. The Breit interaction is treated fully self-consistently. The final results can be used in the accurately determination of atomic masses from highly charged ions data obtained in Penning-trap experiments.

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In this paper we study the electro-optical behaviour and the structure of different TCOs, namely the ZGO, ITO and IZO films before and after being submitted to different hydrogen plasma power densities, for times up to 60 s, aiming their use in a/nc-Si:H solar cells. The results achieved show that ZGO films do not reduce for all plasma conditions used and so, the solar cells produced evidence high current density, about 17% larger that the one recorded in the other TCOs. Besides that, by combining the electrical and optical characteristics of the films through a figure of merit, the data reveal that for the ITO and IZO films even when exposed to very low hydrogen power plasma, the figure of merit is reduced up to 50%. © 2005 Elsevier B.V. All rights reserved.

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In this work we studied the influence of the power density of hydrogen plasma on electrical and optical properties (Hall mobility, free carrier concentration, sheet resistance, optical transmittance and a.c. impedance) of indium zinc oxide films, aiming to determine their chemical stability. This is an important factor for the optimization of amorphous/nanocrystalline p-i-n hydrogenated silicon (a/nc-Si:H) solar cells, since they should remain chemically highly stable during the p layer deposition. To perform this work the transparent conductive oxide was exposed to hydrogen plasma at substrate temperature of 473 K, 87 Pa of pressure and 20 seem of hydrogen flow. The results achieved show that IZO films were reduced for all plasma conditions used, which leads mainly to a decrease on films transmittance. For the lowest power density used in the first minute of plasma exposition the transmittance of the IZO films decreases about 29%.

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In this paper we present the effect of thickness on the electrical and optical properties of intrinsic/nondoped zinc oxide thin films deposited at room temperature by radio frequency magnetron sputtering, able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors and ultraviolet detectors. These films are polycrystalline with a c-axis preferential orientation parallel to the substrate. The films present a resistivity that varies from 5.0 × 104 Ω cm to 1.0 × 109 Ω cm with an optical visible transmittance of 85%. The sensor response exceeds more than five orders of magnitude when exposed to UV light recovering to the initial state in the presence of ozone. © 2006 Elsevier B.V. All rights reserved.

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Currently distributed business process (re) design (resulting in components of business networks) basically relies on technical criteria. And that are the main purposes of most research projects supported by EC. Through the process of building a European Research Area, this means a strong influence in the national research programmes. However it is generally accepted that it should also take into account social criteria and aspects such as the quality of working life, or participation in decision processes. Those were some of the objectives of projects in de 80s decade, and framed some of the main concepts and scientific approaches to work organisation. The democratic participation of network and organisations members in the design process is a critical success factor. This is not accepted by everyone, but is based in sufficient case studies. Nevertheless, in order to achieve an optimization that can satisfying the requirements of agility of a network of enterprises, more complex design methods must be developed. Thus, the support to the collaborative design of distributed work in a network of enterprises, through a concurrent approaching business processes, work organisation and task content is a key factor to achieve such purposes. Increasing needs in terms of amounts of information, agility, and support for collaboration without time and space constrains, imposes the use of a computer-based model.

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In recent years much attention has been given to global supply chains. However, the emphasis has been on forward chains, with reverse flows been insufficiently studied. In this work, we study closed loop supply chains and analyse the impact caused by the introduction of new facility sites into an already existing supply chain. The model considers both strategic and tactical decisions allowing for the design of a global supply chain with reverse flows. The impact of the network redesign is analysed and the associated costs calculated. The obtained MILP is solved using a standard Branch and Bound solver. The results obtained prove that the proposed model handles satisfactorily the network redesign problem.

Zinc oxide is a well-known wide band gap semiconductor material (3.4 eV at room temperature, in the crystalline form), which has many applications, such as for transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers and UV detectors. More recently, it is attracting considerable attention for its possible application to thin film transistors. In this paper, we present some of the recent results already obtained as well as the ones that are being developed in our laboratory. The main advantage presented by these new thin film transistors is the combination of high channel mobility and transparency produced at room temperature which makes these thin film transistors a very promising low cost device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology. © 2005 Elsevier B.V. All rights reserved.

In the present work we have calculated several relativistic transition probabilities for the F-like ions with 10 less-than-or-equals, slant Z less-than-or-equals, slant 49, in the framework of the Multi-Configuration Dirac–Fock method, for applications on laserphysics and astrophysics. The lines considered correspond to transitions between levels of 2p43s, 2p43p and 2p43d configurations. The spectral fine structure is taken into consideration and the results for individual lines are given.

In the present work we have calculated several relativistic transition probabilities for the F-like ions with 10 less-than-or-equals, slant Z less-than-or-equals, slant 49, in the framework of the Multi-Configuration Dirac–Fock method, for applications on laserphysics and astrophysics. The lines considered correspond to transitions between levels of 2p43s, 2p43p and 2p43d configurations. The spectral fine structure is taken into consideration and the results for individual lines are given.