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The paper presents the properties of zinc oxide thin films deposited on glass substrate via dip-coating technique. Zinc acetate dehydrate, ethanol and monoethanol amine were used as starting materials and N2 gas was used as thermal annealing atmosphere for film crystallization. The effect of withdrawal speed on the crystalline structure, morphology, zinc and nitrogen chemical states, optical, electrical and gas-sensing properties of the thin films has been investigated using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, optical transmittance and photoreduction-ozone reoxidation data. © 2007 Elsevier B.V. All rights reserved.

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Power electronics (PE) plays a major role in electrical devices and systems, namely in electromechanical drives, in motor and generator controllers, and in power grids, including high-voltage DC (HVDC) power transmission. PE is also used in devices for the protection against grid disturbances, like voltage sags or power breakdowns. To cope with these disturbances, back-up energy storage devices are used, like uninterruptible power supplies (UPS) and flywheels. Some of these devices may use superconductivity. Commercial PE semiconductor devices (power diodes, power MOSFETs, IGBTs, power Darlington transistors and others) are rarely (or never) experimented for cryogenic temperatures, even when designed for military applications. This means that its integration with HTS power devices is usually done in the hot environment, raising several implementation restrictions. These reasons led to the natural desire of characterising PE under extreme conditions, e. g. at liquid nitrogen temperatures, for use in HTS devices. Some researchers expect that cryogenic temperatures may increase power electronics' performance when compared with room-temperature operation, namely reducing conduction losses and switching time. Also the overall system efficiency may increase due to improved properties of semiconductor materials at low temperatures, reduced losses, and removal of dissipation elements. In this work, steady state operation of commercial PE semiconductors and devices were investigated at liquid nitrogen and room temperatures. Performances in cryogenic and room temperatures are compared. Results help to decide which environment is to be used for different power HTS applications.

Power electronics (PE) plays a major role in electrical devices and systems, namely in electromechanical drives, in motor and generator controllers, and in power grids, including high-voltage DC (HVDC) power transmission. PE is also used in devices for the protection against grid disturbances, like voltage sags or power breakdowns. To cope with these disturbances, back-up energy storage devices are used, like uninterruptible power supplies (UPS) and flywheels. Some of these devices may use superconductivity. Commercial PE semiconductor devices (power diodes, power MOSFETs, IGBTs, power Darlington transistors and others) are rarely (or never) experimented for cryogenic temperatures, even when designed for military applications. This means that its integration with HTS power devices is usually done in the hot environment, raising several implementation restrictions. These reasons led to the natural desire of characterising PE under extreme conditions, e. g. at liquid nitrogen temperatures, for use in HTS devices. Some researchers expect that cryogenic temperatures may increase power electronics' performance when compared with room-temperature operation, namely reducing conduction losses and switching time. Also the overall system efficiency may increase due to improved properties of semiconductor materials at low temperatures, reduced losses, and removal of dissipation elements. In this work, steady state operation of commercial PE semiconductors and devices were investigated at liquid nitrogen and room temperatures. Performances in cryogenic and room temperatures are compared. Results help to decide which environment is to be used for different power HTS applications.

Power electronics (PE) plays a major role in electrical devices and systems, namely in electromechanical drives, in motor and generator controllers, and in power grids, including high-voltage DC (HVDC) power transmission. PE is also used in devices for the protection against grid disturbances, like voltage sags or power breakdowns. To cope with these disturbances, back-up energy storage devices are used, like uninterruptible power supplies (UPS) and flywheels. Some of these devices may use superconductivity. Commercial PE semiconductor devices (power diodes, power MOSFETs, IGBTs, power Darlington transistors and others) are rarely (or never) experimented for cryogenic temperatures, even when designed for military applications. This means that its integration with HTS power devices is usually done in the hot environment, raising several implementation restrictions. These reasons led to the natural desire of characterising PE under extreme conditions, e. g. at liquid nitrogen temperatures, for use in HTS devices. Some researchers expect that cryogenic temperatures may increase power electronics' performance when compared with room-temperature operation, namely reducing conduction losses and switching time. Also the overall system efficiency may increase due to improved properties of semiconductor materials at low temperatures, reduced losses, and removal of dissipation elements. In this work, steady state operation of commercial PE semiconductors and devices were investigated at liquid nitrogen and room temperatures. Performances in cryogenic and room temperatures are compared. Results help to decide which environment is to be used for different power HTS applications.

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This paper presents the design of a test rig for an all HTS linear synchronous motor. Although this motor showed to have several unattractive characteristics, its design raised a number of problems which must be considered in future HTS machines design. HTS electromagnetic properties led to the development of new paradigms in electrical machines and power systems, as e. g. in some cases iron removal and consequent assembly of lighter devices. This is due to superconductor's ability to carry high currents with minimum losses and consequent generation in the surrounding air of flux densities much higher than the allowed by ferromagnetic saturation. However, severe restrictions in HTS power devices design that goes further beyond cryogenic considerations must be accounted in. This is usually the case when BSCCO tapes are used as conductors. Its bending limitations and the presence of flux components perpendicular to tape surface, due to the absence of iron, have to be considered for it may turn some possible applications not so attractive or even practically unfeasible. An all HTS linear synchronous motor built by BSCCO tapes as armature conductors and two trapped-flux YBCO bulks in the mover was constructed and thrust force measurements are starting to be performed. Although the device presents severe restrictions due to the exposed and other reasons, it allowed systematising its design. A pulsed-field magnetiser to generate opposite fluxes for both YBCO bulks is also detailed. Thrust force numerical predictions were already derived and presented.

This paper presents the design of a test rig for an all HTS linear synchronous motor. Although this motor showed to have several unattractive characteristics, its design raised a number of problems which must be considered in future HTS machines design. HTS electromagnetic properties led to the development of new paradigms in electrical machines and power systems, as e. g. in some cases iron removal and consequent assembly of lighter devices. This is due to superconductor's ability to carry high currents with minimum losses and consequent generation in the surrounding air of flux densities much higher than the allowed by ferromagnetic saturation. However, severe restrictions in HTS power devices design that goes further beyond cryogenic considerations must be accounted in. This is usually the case when BSCCO tapes are used as conductors. Its bending limitations and the presence of flux components perpendicular to tape surface, due to the absence of iron, have to be considered for it may turn some possible applications not so attractive or even practically unfeasible. An all HTS linear synchronous motor built by BSCCO tapes as armature conductors and two trapped-flux YBCO bulks in the mover was constructed and thrust force measurements are starting to be performed. Although the device presents severe restrictions due to the exposed and other reasons, it allowed systematising its design. A pulsed-field magnetiser to generate opposite fluxes for both YBCO bulks is also detailed. Thrust force numerical predictions were already derived and presented.

This paper presents the design of a test rig for an all HTS linear synchronous motor. Although this motor showed to have several unattractive characteristics, its design raised a number of problems which must be considered in future HTS machines design. HTS electromagnetic properties led to the development of new paradigms in electrical machines and power systems, as e. g. in some cases iron removal and consequent assembly of lighter devices. This is due to superconductor's ability to carry high currents with minimum losses and consequent generation in the surrounding air of flux densities much higher than the allowed by ferromagnetic saturation. However, severe restrictions in HTS power devices design that goes further beyond cryogenic considerations must be accounted in. This is usually the case when BSCCO tapes are used as conductors. Its bending limitations and the presence of flux components perpendicular to tape surface, due to the absence of iron, have to be considered for it may turn some possible applications not so attractive or even practically unfeasible. An all HTS linear synchronous motor built by BSCCO tapes as armature conductors and two trapped-flux YBCO bulks in the mover was constructed and thrust force measurements are starting to be performed. Although the device presents severe restrictions due to the exposed and other reasons, it allowed systematising its design. A pulsed-field magnetiser to generate opposite fluxes for both YBCO bulks is also detailed. Thrust force numerical predictions were already derived and presented.

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The spread of systems that provide parallelism either ‘‘in-the-large’’ (grid infrastructures, clusters) or ‘‘in-the-small’’ (multi-core chips), creates new opportunities for exploiting parallelism in a wider spectrum of application domains. However, the increasing complexity of parallel and distributed platforms renders the programming, the use, and the management of these systems a costly endeavor that requires advanced expertise and skills. Therefore, there is an increasing need for powerful support tools and environments that will help end-users, application programmers, software engineers and system administrators to manage the increasing complexity of parallel and distributed platforms.

The spread of systems that provide parallelism either «in-the-large» (grid infrastructures, clusters) or «in-the-small» (multi-core chips), creates new opportunities for exploiting parallelism in a wider spectrum of application domains. However, the increasing complexity of parallel and distributed platforms renders the programming, the use, and the management of these systems a costly endeavor that requires advanced expertise and skills. Therefore, there is an increasing need for powerful support tools and environments that will help end-users, application programmers, software engineers and system administrators to manage the increasing complexity of parallel and distributed platforms.

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In this experimental phase equilibrium study, we show for the first time that it is possible to stabilize structure sH of hydrogen clathrate hydrate with the help of some selected promoters. It was established that the formation pressures of these systems are significantly higher than that of structure sII of hydrogen clathrate hydrate when tetrahydrofuran (THF) is used as a promoter. Although no experimental evidence is available yet, it is estimated that the hydrogen storage capacity of structure sH can be as high as 1.4 wt {%} of H 2 , which is about 40{%} higher compared to the hydrogen storage capacity in structure sH. © 2008 American Chemical Society.

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