Inácio, David, João Pina, João Martins, Mário Ventim Neves, and Alfredo Álvarez. "
Lumped Parameters Equivalent Circuit of a Superconducting Hysteresis Motor."
EUCAS Conference 2011. Vol. 36. 2012. 975-979.
AbstractThe potential advantage of using superconducting materials in electrical devices is well described in the literature. The electromagnetic properties of these materials make them unique for several applications, such as, e.g. electrical machines and drives, fault current applications, or superconducting magnetic energy storage. In the development of electromechanical conversion devices, superconducting materials are used foreseeing mainly a decrease in the device dimensions or a performance improvement for the same active volume. To guarantee a good application of this kind of materials it is important to describe and model the phenomena that characterize their operation under different regimes. In this paper, a study based in FEM simulations of a motor with bulk superconductor in the rotor is carried out, with the purpose of understand, quantify and qualify which phenomena are present in the different regimes of the motor, leading to obtaining an equivalent electrical circuit with lumped parameters.
Pereira, AS, C. G. Timoteo, M. Guilherme, F. Folgosa, S. G. Naik, A. G. Duarte, BH HUYNH, and P. Tavares. "
Spectroscopic Evidence for and Characterization of a Trinuclear Ferroxidase Center in Bacterial Ferritin from Desulfovibrio vulgaris Hildenborough."
Journal of the American Chemical Society. 134 (2012): 10822-10832.
AbstractFerritins are ubiquitous and can be found in practically all organisms that utilize Fe. They are composed of 24 subunits forming a hollow sphere with an inner cavity of similar to 80 angstrom in diameter. The main function of ferritin is to oxidize the cytotoxic Fe2+ ions and store the oxidized Fe in the inner cavity. It has been established that the initial step of rapid oxidation of Fe2+ (ferroxidation) by H-type ferritins, found in vertebrates, occurs at a diiron binding center, termed the ferroxidase center. In bacterial ferritins, however, X-ray crystallographic evidence and amino acid sequence analysis revealed a trinuclear Fe binding center comprising a binuclear Fe binding center (sites A and B), homologous to the ferroxidase center of H-type ferritin, and an adjacent mononuclear Fe binding site (site C). In an effort to obtain further evidence supporting the presence of a trinuclear Fe binding center in bacterial ferritins and to gain information on the states of the iron bound to the trinuclear center, bacterial ferritin from Desulfovibrio vulgaris (DvFtn) and its E130A variant was loaded with substoichiometric amounts of Fe2+, and the products were characterized by Mossbauer and EPR spectroscopy. Four distinct Fe species were identified: a paramagnetic diferrous species, a diamagnetic diferrous species, a mixed valence Fe2+Fe3+ species, and a mononuclear Fe2+ species. The latter three species were detected in the wild-type DvFtn, while the paramagnetic diferrous species was detected in the E130A variant. These observations can be rationally explained by the presence of a trinuclear Fe binding center, and the four Fe species can be properly assigned to the three Fe binding sites. Further, our spectroscopic data suggest that (1) the fully occupied trinuclear center supports an all ferrous state, (2) sites B and C are bridged by a mu-OH group forming a diiron subcenter within the trinuclear center, and (3) this subcenter can afford both a mixed valence Fe2+Fe3+ state and a diferrous state. Mechanistic insights provided by these new findings are discussed and a minimal mechanistic scheme involving O-O bond cleavage is proposed.
de Calheiros Velozo, A., G. Lavareda, C. Nunes de Carvalho, and A. Amaral. "
Thermal dehydrogenation of amorphous silicon deposited on c-Si: Effect of the substrate temperature during deposition."
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11. Eds. S. Pizzini, G. Kissinger, H. YamadaKaneta, and J. Kang. Vol. 9. Physica Status Solidi C-Current Topics in Solid State Physics, 9. European Mat Res Soc (E-MRS), 2012. 2198-2202.
AbstractSamples of doped and undoped a-Si: H were deposited at temperatures ranging from 100 degrees C to 350 degrees C and then submitted to different dehydrogenation temperatures (from 350 degrees C to 550 degrees C) and times (from 1 h to 4 h). a-Si: H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity at 25 degrees C, the thermal activation energy of conductivity and its hydrogen content. Hydrogen content was measured after each thermal treatment. Substrate dopant contamination from phosphorus-doped a-Si thin films was evaluated by SIMS after complete dehydrogenation and a junction depth of 0.1 mu m was obtained. Dehydrogenation results show a strong dependence of the hydrogen content of the as-deposited film on the deposition temperature. Nevertheless, the dehydrogenation temperature seems to determine the final H content in a way almost independent from the initial content in the sample. H richer films dehydrogenate faster than films with lower hydrogen concentration. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
de Calheiros Velozo, A., G. Lavareda, C. Nunes de Carvalho, and A. Amaral. "
Thermal dehydrogenation of amorphous silicon deposited on c-Si: Effect of the substrate temperature during deposition."
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11. Eds. S. Pizzini, G. Kissinger, H. YamadaKaneta, and J. Kang. Vol. 9. Physica Status Solidi C-Current Topics in Solid State Physics, 9. European Mat Res Soc (E-MRS), 2012. 2198-2202.
AbstractSamples of doped and undoped a-Si: H were deposited at temperatures ranging from 100 degrees C to 350 degrees C and then submitted to different dehydrogenation temperatures (from 350 degrees C to 550 degrees C) and times (from 1 h to 4 h). a-Si: H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity at 25 degrees C, the thermal activation energy of conductivity and its hydrogen content. Hydrogen content was measured after each thermal treatment. Substrate dopant contamination from phosphorus-doped a-Si thin films was evaluated by SIMS after complete dehydrogenation and a junction depth of 0.1 mu m was obtained. Dehydrogenation results show a strong dependence of the hydrogen content of the as-deposited film on the deposition temperature. Nevertheless, the dehydrogenation temperature seems to determine the final H content in a way almost independent from the initial content in the sample. H richer films dehydrogenate faster than films with lower hydrogen concentration. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim