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One potential advantage of the application of superconducting materials in electrical machines is the possibility to build lighter and compact devices by removing iron. These machines find applications, e.g., in systems where cryogenics is already available, or in naturally cryogenic environments. The design of motors with high temperature superconductors (HTS) presents issues unconsidered in classical machines, besides considerations on cryogenics, such as HTS brittleness or mechanical restrictions. Moreover, HTS' electromagnetic properties also degrade due to flux density components, which arise if there is no iron to guide magnetic flux. Several aspects must thus be considered in the design stage, as applications may turn less attractive or even unfeasible. In this paper these issues are detailed, and a numerical methodology for the design of an all superconducting (without iron or conventional conductors) linear synchronous motor is presented.

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During electric polarization charge is injected into the material. The structure is decorated with space charge and during the subsequent heating an apparent peak and the genuine peaks that are related to dipole randomization and charge detrapping are observed. The method is used here to analyze the molecular movements in polyimide in the temperature range from 293 to 623K. Two weak relaxations have been observed around 337K and around 402K. The electrical conductivity changes with temperature in agreement with the Arrhenius law only below (W=(0.84±0.03) eV ) and above ( W=(0.82±0.03) eV) the temperature range where the β relaxation is observed. The variation of the electrical conductivity with temperature, in the range of the β relaxation, is controlled by the variation of the charge currier mobility with temperature and it shows a non-Arrhenius behavior. We suggest that the β1 sub-glass relaxation is related to the rotation or oscillation of phenyl groups and the β2 sub-glass relaxation is related to the rotation or oscillation of the imidic ring. At higher temperatures an apparent peak was observed. The relaxation time of the trapped charge, at 573K, is high than 8895s.

During electric polarization charge is injected into the material. The structure is decorated with space charge and during the subsequent heating an apparent peak and the genuine peaks that are related to dipole randomization and charge detrapping are observed. The method is used here to analyze the molecular movements in polyimide in the temperature range from 293 to 623 K. Two weak relaxations have been observed around 337 K and around 402 K. The electrical conductivity changes with temperature in agreement with the Arrhenius law only below (W= (0.84 +/- 0.03) eV) and above ( W (0.82 +/- 0.03) eV) the temperature range where the beta relaxation is observed. The variation of the electrical conductivity with temperature, in the range of the beta relaxation, is controlled by the variation of the charge currier mobility with temperature and it shows a non-Arrhenius behavior. We suggest that the beta(1) sub-glass relaxation is related to the rotation or oscillation of phenyl groups and the beta(2) sub-glass relaxation is related to the rotation or oscillation of the imidic ring. At higher temperatures an apparent peak was observed. The relaxation time of the trapped charge, at 573 K, is high than 8895 s. (C) 2010 Elsevier B.V. All rights reserved.

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Respiratory nitric oxide reductase (NOR) was purified from membrane extract of Pseudomonas (Ps.) nautica cells to homogeneity as judged by polyacrylamide gel electrophoresis. The purified protein is a heterodimer with subunits of molecular masses of 54 and 18 kDa. The gene encoding both subunits was cloned and sequenced. The amino acid sequence shows strong homology with enzymes of the cNOR class. Iron/heme determinations show that one heme c is present in the small subunit (NORC) and that approximately two heme b and one non-heme iron are associated with the large subunit (NORB), in agreement with the available data for enzymes of the cNOR class. Mossbauer characterization of the as-purified, ascorbate-reduced, and dithionite-reduced enzyme confirms the presence of three heme groups (the catalytic heme b(3) and the electron transfer heme b and heme c) and one redox-active non-heme Fe (Fe-B). Consistent with results obtained for other cNORs, heme c and heme b in Ps. nautica cNOR were found to be low-spin while FeB was found to be high-spin. Unexpectedly, as opposed to the presumed high-spin state for heme b(3), the Mossbauer data demonstrate unambiguously that heme b(3) is, in fact, low-spin in both ferric and ferrous states, suggesting that heme b(3) is six-coordinated regardless of its oxidation state. EPR spectroscopic measurements of the as-purified enzyme show resonances at the g similar to 6 and g similar to 2-3 regions very similar to those reported previously for other cNORs. The signals at g = 3.60, 2.99, 2.26, and 1.43 are attributed to the two charge-transfer low-spin ferric heme c and heme b. Previously, resonances at the g similar to 6 region were assigned to a small quantity of uncoupled high-spin Fe-III heme b(3). This assignment is now questionable because heme b(3) is low-spin. On the basis of our spectroscopic data, we argue that the g = 6.34 signal is likely arising from a spin spin coupled binuclear center comprising the low-spin Fe-III heme b(3) and the high-spin Fe-B(III). Activity assays performed under various reducing conditions indicate that heme b(3) has to be reduced for the enzyme to be active. But, from an energetic point of view, the formation of a ferrous heme-NO as an initial reaction intermediate for NO reduction is disfavored because heme [FeNO](7) is a stable product. We suspect that the presence of a sixth ligand in the Fe-II-heme b(3) may weaken its affinity for NO and thus promotes, in the first catalytic step, binding of NO at the Fe-B(II) site. The function of heme b(3) would then be to orient the Fe-B-bound NO molecules for the formation of the N-N bond and to provide reducing equivalents for NO reduction.

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Transparent, undoped semiconductive thin films of zinc oxide were deposited by radio frequency plasma enhanced reactive thermal evaporation of zinc rods in the presence of oxygen at room temperature, without any post-deposition annealing treatments. The study of the variation of rf power, in the range 5-200W, on the main properties of these films was made. A decrease of the electrical conductivity of these films with increasing rf power was observed (10(-3) to 10(-12) (Omega cm)(-1)), respectively, while the average visible transparency was kept practically constant (approximate to 80%). From this initial study, a set of bottom-gate type thin-film transistors were made using the most promising semiconductor materials. Preliminary I(V) measurements showed all transistors working, with best results obtained from zinc oxide material deposited at the lowest rf power (20 W), within the deposition conditions range which leads to semiconductive material. Such devices presented an I-on (20 V)/I-off (-5 V) ratio of 6 x 10(6) and a field-effect mobility of 0.37 cm(2)/(V s). (C) 2010 Elsevier B.V. All rights reserved.

Transparent, undoped semiconductive thin films of zinc oxide were deposited by radio frequency plasma enhanced reactive thermal evaporation of zinc rods in the presence of oxygen at room temperature, without any post-deposition annealing treatments. The study of the variation of rf power, in the range 5-200W, on the main properties of these films was made. A decrease of the electrical conductivity of these films with increasing rf power was observed (10(-3) to 10(-12) (Omega cm)(-1)), respectively, while the average visible transparency was kept practically constant (approximate to 80%). From this initial study, a set of bottom-gate type thin-film transistors were made using the most promising semiconductor materials. Preliminary I(V) measurements showed all transistors working, with best results obtained from zinc oxide material deposited at the lowest rf power (20 W), within the deposition conditions range which leads to semiconductive material. Such devices presented an I-on (20 V)/I-off (-5 V) ratio of 6 x 10(6) and a field-effect mobility of 0.37 cm(2)/(V s). (C) 2010 Elsevier B.V. All rights reserved.

Pseudoazurins are small type 1 copper proteins that are involved in the flow of electrons between various electron donors and acceptors in the bacterial periplasm, mostly under denitrifying conditions. The previously determined structure of Paracoccus pantotrophus pseudoazurin in the oxidized form was improved to a nominal resolution of 1.4 angstrom, with R and R-free values of 0.188 and 0.206, respectively. This high-resolution structure makes it possible to analyze the interactions between the monomers and the solvent structure in detail. Analysis of the high-resolution structure revealed the structural regions that are responsible for monomer-monomer recognition during dimer formation and for protein-protein interaction and that are important for partner recognition. The pseudoazurin structure was compared with other structures of various type 1 copper proteins and these were grouped into families according to similarities in their secondary structure; this may be useful in the annotation of copper proteins in newly sequenced genomes and in the identification of novel copper proteins.

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Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InOx, ITO, ZnOx or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu2S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu2S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work CuxS thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our CuxS thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InOx, ITO, ZnOx or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu2S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu2S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work CuxS thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our CuxS thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Amongst applications of high temperature superconductors, fault current limiters are foreseen as one of the most promising in power systems. Several topologies have been developed in the last years, taking advantage of different superconductors? properties. Increasing distributed generation (DG) penetration, based on renewable energy, adds new short-circuit sources to electrical grids, which brings several energy quality and protection issues. Superconducting fault current limiters can obviate these problems, representing thus an enabling technology for DG penetration. In this paper current limiter topologies are presented, its operations principles, strengths and weaknesses, in the context of these DG grids. In the end, future trends are discussed.

In view of the increasing need for larger-area display devices with improved image quality it becomes increasingly important to decrease resistivity while maintaining transparency in transparent conducting oxides (TCOs). Accomplishing the goal of increased conductivity and transparency will require a deeper understanding of the relationships between the structure and the electro-optical properties of these materials. In this work we study the role of tin doping in InOx thin films. Undoped indium oxide (InOx) and indium tin oxide (ITO) thin films were deposited at room temperature by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE), a new technique recently developed in our laboratory using as evaporation source either In rods or a 90%In:10%Sn alloy, respectively. The two most important macroscopic properties-optical transparency and electrical resistivity-seem to be independent of the tin content in these deposition conditions. Results show that the films present a visible transmittance of the order of 82%, and an electrical resistivity of about 8 x 10(-4) Omega . cm. Surface morphology characterization made by atomic force microscopy (AFM) showed that homogeneity of the films deposited from a 90%In:10%Sn alloy is enhanced (a film with small and compact grains is produced) and consequently a smooth surface with reduced roughness and with similar grain size and shape is obtained. Films deposited from pure In rods evaporation source show the presence of aggregates randomly distributed above a film tissue formed of thinner grains.

Conductive and transparent undoped thin films of indium oxide (InOx), 120 nm average thick, were deposited by radio frequency plasma enhanced reactive thermal evaporation (rf-PERTE) of indium in the presence of oxygen at room temperature. Several substrates were used in order to study their influence on the main properties of these films: alkali free (AF) glass, fused silica, crystalline silicon and polyethylene terephthalate (PET). Surface morphology of the InOx films as a function of the substrates was observed by SEM and showed that the undoped InOx films obtained are nano-structured. For the c-Si substrate, InOx films with increased grain size are obtained, induced by the crystalline substrate. Films deposited on fused silica and AF glass substrates show a nano-grainy surface with similar surface morphologies. The InOx films deposited on AF glass show the highest values of both: electrical conductivity of about 1100 (Omega cm)(-1) and visible transmittance of 85%. The substrate has a greater influence on the surface morphology of the films when a polymer (PET) is used. InOx films deposited on PET show a decrease in the electrical conductivity (90 (Omega cm)(-1)) and a slight decrease in the average visible transmittance (78%).

Conductive and transparent undoped thin films of indium oxide (InOx), 120 nm average thick, were deposited by radio frequency plasma enhanced reactive thermal evaporation (rf-PERTE) of indium in the presence of oxygen at room temperature. Several substrates were used in order to study their influence on the main properties of these films: alkali free (AF) glass, fused silica, crystalline silicon and polyethylene terephthalate (PET). Surface morphology of the InOx films as a function of the substrates was observed by SEM and showed that the undoped InOx films obtained are nano-structured. For the c-Si substrate, InOx films with increased grain size are obtained, induced by the crystalline substrate. Films deposited on fused silica and AF glass substrates show a nano-grainy surface with similar surface morphologies. The InOx films deposited on AF glass show the highest values of both: electrical conductivity of about 1100 (Omega cm)(-1) and visible transmittance of 85%. The substrate has a greater influence on the surface morphology of the films when a polymer (PET) is used. InOx films deposited on PET show a decrease in the electrical conductivity (90 (Omega cm)(-1)) and a slight decrease in the average visible transmittance (78%).

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