This paper presents data concerning the composition structure and optical characteristics of polymorphous silicon films produced by plasma enhanced chemical vapour deposition at 27.12 MHz and determined respectively by infrared spectrometry, micro Raman, exodiffusion and spectroscopic ellipsometry measurements. When compared to the pm-Si:H films produced at 13.56 MHz, the films produced at 27.12 MHz present hydrogen contents in the range of 21 at%, the sharp peak ascribed to the exodifusion measurements is shifted towards high temperatures and the imaginary part of the dielectric function 〈ε2〉 is larger and shifted to high energies. Apart from that the peaks of the infrared spectra ascribed to the stretching modes shift towards high wave numbers and the half width of the micro Raman peaks shrinks, meaning that the films produced at 27.12 MHz are more compact and dense.

The crystallization of a borosilicate glass, when compacts of powdered glass were sintered under various conditions, was investigated by dilatometric and XRD analysis. The dilatometry results from non-isothermal sintering experiments until 800°C, performed at different heating rates (1, 2, 5, 8 and 10°C/min), revealed that the compacts started to shrink above ∼ 600°C and that the shrinkage decreased with the increase of the heating rate for temperatures up to ∼750°C. Above this temperature, and specifically when the samples were heated at heating rates < 5°C /min, the shrinkage was hindered, while samples heated at heating rates ≥ 5°C/min showed continuous shrinkage. XRD results showed that the formation of cristobalite had occurred during the sintering at the lowest heating rates and therefore, the presence of this crystalline phase was affecting the shrinkage of the compacts, inhibiting further sintering of the glass. The crystallization of the glass when sintered at a temperature in the range 700-850°C and hold at the selected temperature during various times was also analysed. XRD results showed that both cristobalite and quartz were present in glass compacts sintered under particular conditions (for example, after heating during 24h at 725°C and 765°C). Quartz dissolution took place when the glass samples were sintered at 850°C. At this temperature and whatever the sintering time, cristobalite was the only crystalline phase present in the sintered compacts.

This paper presents results of the spatial and frequency detection limits of an integrated array of 32 one-dimensional amorphous silicon thin film position sensitive detectors with a nip structure, under continuous and pulsed laser operation conditions. The data obtained show that 0.45×0.06 cm arrays, occupying a total active area of about 1 cm2 have a spatial resolution better than 10 μm (modulation transfer function of about 0.2), with a cut-off frequency of about 6.8 KHz. Besides that, under pulsed laser conditions the device non-linearity has its minimum (about 1.6%), for a frequency of about 200Hz. Up to the limits of the cut-off frequency, the device non-linearity increases to values above 4%.

The dielectric breakdown of thin films of low-density polyethylene (LDPE) electrically aged in an aqueous solution of NaCl under an AC electric field was investigated. A two-parameter Weibull function was used for the dielectric breakdown time to failure. The probability of failure for a sample was obtained by the White method for progressively censored data. Samples aged at different temperatures were compared. The results show that initially the samples aged at lower temperature (approximate to25degreesC) are more prone to fail, while those aged at higher temperature (50degreesC) fail at longer times. This was attributed to a competition between oxidation and diffusion.

The dielectric breakdown of thin films of low-density polyethylene (LDPE) electrically aged in an aqueous solution of NaCl under an AC electric field was investigated. A two-parameter Weibull function was used for the dielectric breakdown time to failure. The probability of failure for a sample was obtained by the White method for progressively censored data. Samples aged at different temperatures were compared. The results show that initially the samples aged at lower temperature (approximate to25degreesC) are more prone to fail, while those aged at higher temperature (50degreesC) fail at longer times. This was attributed to a competition between oxidation and diffusion.

This paper presents preliminary results on Al doped ZnO thin films prepared by the solgel method. The thin films were produced by a dip-coater technique on glass substrate, using zinc acetate dihydrate, aluminium chloride hexahydrate, 2-methoxyethanol and monoethanolamine as raw materials. The ZnO thin films were analysed by XRD, Hall effect and SEM measurements. In order to determine the influence of the thermal treatments on the film properties, a set of four different heat treatments (atmosphere and temperature) were studied. All the films are polycrystalline presenting a crystallographic c-axis orientation (002) perpendicular to the substrate. The best results were obtained for films pre-heated at 400°C and post-heated for 1 hour in air at 600°C, after annealing under a reduced atmosphere of forming gas, where a resistivity of 3.9×10-3 Ωcm, a Hall mobility of 34.1 cm2/Vs, a carrier concentration of 4.7×1019 cm-3 and an optical transmittance of 90% were achieved.