Composition, structure and optical characteristics of polymorphous silicon films deposited by PECVD at 27.12 MHz
- Citation:
- i Martins, R.a, Águas Ferreira Fortunato Raniero Roca Cabarrocas H. a I. a. "Composition, structure and optical characteristics of polymorphous silicon films deposited by PECVD at 27.12 MHz." Materials Science Forum. 455-456 (2004): 100-103.
Abstract:
This paper presents data concerning the composition structure and optical characteristics of polymorphous silicon films produced by plasma enhanced chemical vapour deposition at 27.12 MHz and determined respectively by infrared spectrometry, micro Raman, exodiffusion and spectroscopic ellipsometry measurements. When compared to the pm-Si:H films produced at 13.56 MHz, the films produced at 27.12 MHz present hydrogen contents in the range of 21 at%, the sharp peak ascribed to the exodifusion measurements is shifted towards high temperatures and the imaginary part of the dielectric function 〈ε2〉 is larger and shifted to high energies. Apart from that the peaks of the infrared spectra ascribed to the stretching modes shift towards high wave numbers and the half width of the micro Raman peaks shrinks, meaning that the films produced at 27.12 MHz are more compact and dense.
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