Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si: H MIS photodiodes | Hugo Águas

Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si: H MIS photodiodes

Citation:: Aguas, H., L. Pereira, I. Ferreira, A. R. Ramos, A. S. Viana, J. Andreu, P. Vilarinho, E. Fortunato, and R. Martins. "Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si: H MIS photodiodes." Journal of non-crystalline solids. 338 (2004): 810-813.

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