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Tardio, M., R. Ramirez, R. Gonzalez, J. V. Pinto, R. C. da Silva, E. Alves, and Y. Chen, "Electrical conductivity of as-grown and oxidized MgO : Li crystals implanted with Li ions", Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 218, pp. 164-169, 2004. AbstractWebsite
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Pereira, S., A. Gonçalves, N. Correia, J. Pinto, L. Í. Pereira, R. Martins, and E. Fortunato, "Electrochromic behavior of NiO thin films deposited by e-beam evaporation at room temperature", Solar Energy Materials and Solar Cells, vol. 120, Part A, pp. 109-115, 2014. AbstractWebsite

In this work we report the role of thickness on electrochromic behavior of nickel oxide (NiO) films deposited by e-beam evaporation at room temperature on ITO-coated glass. The structure and morphology of films with thicknesses between 100 and 500 nm were analyzed and then correlated with electrochemical response and transmittance modulation when immersed in 0.5 M LiClO4–PC electrolyte. The NiO exhibits an anodic coloration, reaching for the thickest film a transmittance modulation of 66% between colored and bleached state, at 630 nm, with a color efficiency of 55 cm2 C−1. Very fast switch between states was obtained, where coloration and bleaching times are 3.6 s cm−2 and 1.4 s cm−2, respectively.

Raiola, F., P. Migliardi, G. Gyurky, M. Aliotta, A. Formicola, R. Bonetti, C. Broggini, L. Campajola, P. Corvisiero, H. Costantini, J. Cruz, A. D'Onofrio, Z. Fulop, G. Gervino, L. Gialanella, A. Guglielmetti, G. Imbriani, C. Gustavino, A. P. Jesus, M. Junker, R. W. Kavanagh, P. G. P. Moroni, A. Ordine, J. V. Pinto, P. Prati, V. Roca, J. P. Ribeiro, D. Rogalla, C. Rolfs, M. Romano, F. Schumann, D. Schurmann, E. Somorjai, F. Strieder, F. Terrasi, H. P. Trautvetter, and S. Zavatarelli, "Enhanced electron screening in d(d, p)t for deuterated Ta", European Physical Journal A, vol. 13, issue 3, pp. 377-382, 2002. AbstractWebsite
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Nayak, P. K., J. V. Pinto, G. Goncalves, R. Martins, and E. Fortunato, "Environmental, Optical, and Electrical Stability Study of Solution-Processed Zinc-Tin-Oxide Thin-Film Transistors", Journal of Display Technology, vol. 7, issue 12, pp. 640-643, 2011. Abstract
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Ribeiro, J. P., A. P. Jesus, B. Braizinha, J. Cruz, R. Mateus, and J. V. Pinto, "Experimental study of the F-19(p,alpha gamma)O-16 reaction", Nuclear Physics A, vol. 688, issue 1-2, pp. 468C-471C, 2001. AbstractWebsite
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Pinto, J. V., R. Branquinho, P. Barquinha, E. Alves, R. Martins, and E. Fortunato, "Extended-Gate ISFETs Based on Sputtered Amorphous Oxides", Journal of Display Technology, vol. 9, issue 9, pp. 729-734, 2013. AbstractWebsite
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