Publications

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2005
Raniero, L., A. Gonçalves, A. Pimentel, I. Ferreira, S. Zhang, L. Pereira, H. Aguas, E. Fortunato, and R. Martins. "Influence of hydrogen plasma on electrical and optical properties of transparent conductive oxides." MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 862 (2005): 543. Abstract
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Raniero, L., N. Martins, P. Canhola, S. Zhang, S. Pereira, I. Ferreira, E. Fortunato, and R. Martins. "Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p–i–n solar cell." Solar energy materials and solar cells. 87.1 (2005): 349-355. Abstract
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Canhola, P., N. Martins, L. Raniero, S. Pereira, E. Fortunato, I. Ferreira, and R. Martins. "Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering." Thin Solid Films. 487.1 (2005): 271-276. Abstract
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Raniero, L., S. Zhang, H. Aguas, I. Ferreira, R. Igreja, E. Fortunato, and R. Martins. "Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHz." Thin Solid Films. 487.1 (2005): 170-173. Abstract
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Raniero, L., I. Ferreira, H. Aguas, S. Zhang, E. Fortunato, and R. Martins Study of a-SiC: H buffer layer on nc-Si/a-Si: H solar cells deposited by PECVD technique. Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE. IEEE, 2005. Abstract
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2004
Pereira, LuÍs, Isabel Ferreira, Rodrigo Martins, Hugo Águas, Elvira Fortunato, and Leandro Raniero. "Batch Processing Method to Deposit a-Si: H Films by PECVD." Materials Science Forum. 455 (2004): 104-107. Abstract
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Zhang, S., L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Águas, and R. Martins. "Characterization of silicon carbide thin films prepared by VHF-PECVD technology." Journal of non-crystalline solids. 338 (2004): 530-533. Abstract
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Raniero, L., L. Pereira, Shibin Zhang, I. Ferreira, H. Águas, E. Fortunato, and R. Martins. "Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques." Journal of non-crystalline solids. 338 (2004): 206-210. Abstract
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Ferreira, Isabel, Rodrigo Martins, Pere Roca i Cabarrocas, Hugo Águas, Elvira Fortunato, and Leandro Raniero. "Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz." Materials Science Forum. 455 (2004): 100-103. Abstract
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Aguas, H., L. Pereira, I. Ferreira, A. R. Ramos, A. S. Viana, J. Andreu, P. Vilarinho, E. Fortunato, and R. Martins. "Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si: H MIS photodiodes." Journal of non-crystalline solids. 338 (2004): 810-813. Abstract
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Pereira, LuÍs, Isabel Ferreira, Rodrigo Martins, Paula M. Vilarinho, Hugo Águas, Elvira Fortunato, A. R. Ramos, A. S. Viana, and J. Andreu. "Effect of annealing on gold rectifying contacts in amorphous silicon." Materials Science Forum. 455 (2004): 96-99. Abstract
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Martins, R., H. Aguas, I. Ferreira, E. Fortunato, L. Raniero, and P. Roca Cabarrocas. "Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz." Materials Science Forum. 455 (2004): 100-103. Abstract
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Pereira, LuÍs, Isabel Ferreira, Rodrigo Martins, Hugo Águas, Elvira Fortunato, Leandro Raniero, S. Zang, and L. Boufendi. "Growth of Polymorphous/Nanocrystalline Silicon Films Deposited by PECVD at 13.56 MHz." Materials Science Forum. 455 (2004): 532-535. Abstract
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Raniero, L., N. Martins, P. Canhola, S. Pereira, I. Ferreira, E. Fortunato, and R. Martins. "Spectral response of large area amorphous silicon solar cells." High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes). 8.2 (2004). Abstract
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2003
Aguas, H., V. Silva, E. Fortunato, S. Lebib, P. Roca i Cabarrocas, I. Ferreira, L. Guimaraes, and R. Martins. "Large area deposition of polymorphous silicon by plasma enhanced chemical vapor deposition at 27.12 MHz and 13.56 MHz." Japanese journal of applied physics. 42 (2003): 4935. Abstract
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Martins, Rodrigo, Hugo Águas, Isabel Ferreira, Elvira Fortunato, Sarra Lebib, P. Roca i Cabarrocas, and Leopoldo Guimarães. "Polymorphous silicon films deposited at 27.12 MHz." Chemical Vapor Deposition. 9.6 (2003): 333-337. Abstract
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2001
Ferreira, I., M. E. V. Costa, L. Pereira, E. Fortunato, R. Martins, A. R. Ramos, and M. F. Silva. "Silicon carbide alloys produced by hot wire, hot wire plasma-assisted and plasma-enhanced CVD techniques." Applied surface science. 184.1 (2001): 8-19. Abstract
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