Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
- Citation:
- Fortunato, E.M.C., Barquinha Pimentel Gonçalves Marques Martins Pereira P. M. C. A. "Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature." Applied Physics Letters. 85 (2004): 2541-2543.
Abstract:
The fabrication of high field-effect mobility ZnO thin film transistor (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. The ZnO used was deposited onto borosilicate glass substrate with a thickness of 1 mm with 100 x 100 mm surface area, coated with a 200 nm sputtered ITO film. The hall mobilities of about 2 cm2 / V s and a carrier concentration of 3 x 1016cm-3 were measured for the films with lower resistivity. It was observed that the ZnO-TFT presented an average optical transmission of 80% in the visibility part of the spectrum.
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