@article {Fortunato20042541,
	title = {Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature},
	journal = {Applied Physics Letters},
	volume = {85},
	number = {13},
	year = {2004},
	note = {<p>cited By 415</p>
},
	pages = {2541-2543},
	abstract = {<p>The fabrication of high field-effect mobility ZnO thin film transistor (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. The ZnO used was deposited onto borosilicate glass substrate with a thickness of 1 mm with 100 x 100 mm surface area, coated with a 200 nm sputtered ITO film. The hall mobilities of about 2 cm2 / V s and a carrier concentration of 3 x 1016cm-3 were measured for the films with lower resistivity. It was observed that the ZnO-TFT presented an average optical transmission of 80\% in the visibility part of the spectrum.</p>
},
	doi = {10.1063/1.1790587},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-7544247006\&partnerID=40\&md5=0c41fa8d326951414a9024ea10e40029},
	author = {Fortunato, E.M.C., Barquinha, P.M.C., Pimentel, A.C.M.B.G., Gon{\c c}alves, A.M.F., Marques, A.J.S., Martins, R.F.P., Pereira, L.M.N.}
}
