<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fortunato, E.M.C., Barquinha, P.M.C., Pimentel, A.C.M.B.G., Gonçalves, A.M.F., Marques, A.J.S., Martins, R.F.P., Pereira, L.M.N.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2004</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-7544247006&amp;partnerID=40&amp;md5=0c41fa8d326951414a9024ea10e40029</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">13</style></number><volume><style face="normal" font="default" size="100%">85</style></volume><pages><style face="normal" font="default" size="100%">2541-2543</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The fabrication of high field-effect mobility ZnO thin film transistor (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. The ZnO used was deposited onto borosilicate glass substrate with a thickness of 1 mm with 100 x 100 mm surface area, coated with a 200 nm sputtered ITO film. The hall mobilities of about 2 cm2 / V s and a carrier concentration of 3 x 1016cm-3 were measured for the films with lower resistivity. It was observed that the ZnO-TFT presented an average optical transmission of 80% in the visibility part of the spectrum.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 415&lt;/p&gt;
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