<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, Rodrigo, Vieira, Manuela, Ferreira, Isabel, Fortunato, Elvira, Guimaraes, L.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques</style></title><secondary-title><style face="normal" font="default" size="100%">Conference Record of the IEEE Photovoltaic Specialists Conference</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028724235&amp;partnerID=40&amp;md5=8131d07866d54409b3eb85ae64005df2</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">1</style></volume><pages><style face="normal" font="default" size="100%">508-511</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;This paper presents results of the role of the oxygen partial pressure (pO2) used on the properties exhibited by doped μc silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 0&lt;/p&gt;
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