@conference {Martins1994508,
	title = {Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques},
	booktitle = {Conference Record of the IEEE Photovoltaic Specialists Conference},
	volume = {1},
	year = {1994},
	note = {<p>cited By 0</p>
},
	pages = {508-511},
	abstract = {<p>This paper presents results of the role of the oxygen partial pressure (pO2) used on the properties exhibited by doped μc silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028724235\&partnerID=40\&md5=8131d07866d54409b3eb85ae64005df2},
	author = {Martins, Rodrigo, Vieira, Manuela, Ferreira, Isabel, Fortunato, Elvira, Guimaraes, L.}
}
