Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing
- Citation:
- b Fortunato, E.a, Barros Barquinha Figueiredo Park Hwang Martins R. a P. a. "Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing." Applied Physics Letters. 97 (2010).
Abstract:
P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x<2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal Β-Sn and α -SnOx phases, after annealing at 200 °C. These films exhibit a hole carrier concentration in the range of ≈ 1016 - 1018 cm-3; electrical resistivity between 101 - 102 cm; Hall mobility around 4.8 cm2 /V s; optical band gap of 2.8 eV; and average transmittance ≈85% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1 cm2 /V s and an ON/OFF modulation ratio of 103. © 2010 American Institute of Physics.
Notes:
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