@article {Fortunato2010,
	title = {Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing},
	journal = {Applied Physics Letters},
	volume = {97},
	number = {5},
	year = {2010},
	note = {<p>cited By 79</p>
},
	abstract = {<p>P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x\&lt;2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal Β-Sn and α -SnOx phases, after annealing at 200 {\textdegree}C. These films exhibit a hole carrier concentration in the range of ≈ 1016 - 1018 cm-3; electrical resistivity between 101 - 102 cm; Hall mobility around 4.8 cm2 /V s; optical band gap of 2.8 eV; and average transmittance ≈85\% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1 cm2 /V s and an ON/OFF modulation ratio of 103. {\textcopyright} 2010 American Institute of Physics.</p>
},
	doi = {10.1063/1.3469939},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955724774\&partnerID=40\&md5=cbb661d999c61eb5f039d93c58777d5d},
	author = {Fortunato, E.a , Barros, R.a b , Barquinha, P.a , Figueiredo, V.a , Park, S.-H.K.c , Hwang, C.-S.c , Martins, R.a}
}
