<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fortunato, E.a , Barros, R.a b , Barquinha, P.a , Figueiredo, V.a , Park, S.-H.K.c , Hwang, C.-S.c , Martins, R.a</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2010</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955724774&amp;partnerID=40&amp;md5=cbb661d999c61eb5f039d93c58777d5d</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">97</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x&amp;lt;2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal Β-Sn and α -SnOx phases, after annealing at 200 °C. These films exhibit a hole carrier concentration in the range of ≈ 1016 - 1018 cm-3; electrical resistivity between 101 - 102 cm; Hall mobility around 4.8 cm2 /V s; optical band gap of 2.8 eV; and average transmittance ≈85% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1 cm2 /V s and an ON/OFF modulation ratio of 103. © 2010 American Institute of Physics.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 79&lt;/p&gt;
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