<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">de Nijs, J.M.M.a , Carvalho, C.b , Santos, M.b , Martins, R.b</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Surface Science</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1991</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026395801&amp;partnerID=40&amp;md5=90cd16b8ea0b4ba24c789fa47753abd3</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">4</style></number><volume><style face="normal" font="default" size="100%">52</style></volume><pages><style face="normal" font="default" size="100%">339-342</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The reduction of the In2O3 caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics. © 1991.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 5&lt;/p&gt;
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