@article {deNijs1991339,
	title = {A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface},
	journal = {Applied Surface Science},
	volume = {52},
	number = {4},
	year = {1991},
	note = {<p>cited By 5</p>
},
	pages = {339-342},
	abstract = {<p>The reduction of the In2O3 caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 {\r A}) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics. {\textcopyright} 1991.</p>
},
	doi = {10.1016/0169-4332(91)90077-W},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026395801\&partnerID=40\&md5=90cd16b8ea0b4ba24c789fa47753abd3},
	author = {de Nijs, J.M.M.a , Carvalho, C.b , Santos, M.b , Martins, R.b}
}
