<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pei, Z.L.a , Pereira, L.a , Goņalves, G.a , Barquinha, P.a , Franco, N.b , Alves, E.b , Rego, A.M.B.c , Martins, R.a , Fortunato</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Room-temperature cosputtered HfO2 - Al2 O3 multicomponent gate dielectrics</style></title><secondary-title><style face="normal" font="default" size="100%">Electrochemical and Solid-State Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2009</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-68949163562&amp;partnerID=40&amp;md5=ff269fe01cc97fe08929f33f7c7e9d29</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">10</style></number><volume><style face="normal" font="default" size="100%">12</style></volume><pages><style face="normal" font="default" size="100%">G65-G68</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Hafnium oxide-aluminum oxide (HfAlO) dielectric films were cosputtered using HfO2 and Al2 O3 targets, and their properties are studied in comparison with pure HfO2 films. The X-ray diffraction studies confirmed that the HfO2 films are nanocrystalline with a monoclinic phase. The as-deposited HfAlO films with a chemical composition of (HfO2) 0.86 (Al2 O3) 0.14 are amorphous even after annealing at 500°C. Further, the cosputtered films show a slight reduction in leakage current. The leakage current density may be significantly reduced below 3× 10-10 A cm-2 at an electric field of 0.25 MV/cm when applying the proper radio-frequency bias to the substrate. © 2009 The Electrochemical Society.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 15&lt;/p&gt;
</style></notes></record></records></xml>