@article {Pei2009,
	title = {Room-temperature cosputtered HfO2 - Al2 O3 multicomponent gate dielectrics},
	journal = {Electrochemical and Solid-State Letters},
	volume = {12},
	number = {10},
	year = {2009},
	note = {<p>cited By 15</p>
},
	pages = {G65-G68},
	abstract = {<p>Hafnium oxide-aluminum oxide (HfAlO) dielectric films were cosputtered using HfO2 and Al2 O3 targets, and their properties are studied in comparison with pure HfO2 films. The X-ray diffraction studies confirmed that the HfO2 films are nanocrystalline with a monoclinic phase. The as-deposited HfAlO films with a chemical composition of (HfO2) 0.86 (Al2 O3) 0.14 are amorphous even after annealing at 500{\textdegree}C. Further, the cosputtered films show a slight reduction in leakage current. The leakage current density may be significantly reduced below 3{\texttimes} 10-10 A cm-2 at an electric field of 0.25 MV/cm when applying the proper radio-frequency bias to the substrate. {\textcopyright} 2009 The Electrochemical Society.</p>
},
	doi = {10.1149/1.3186643},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-68949163562\&partnerID=40\&md5=ff269fe01cc97fe08929f33f7c7e9d29},
	author = {Pei, Z.L.a , Pereira, L.a , Gonalves, G.a , Barquinha, P.a , Franco, N.b , Alves, E.b , Rego, A.M.B.c , Martins, R.a , Fortunato}
}
