P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs
- Citation:
- Barquinha, P., Pereira Gonçalves Martins Fortunato L. G. R. "P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs." 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. Vol. 3. 2010. 1376-1379.
Abstract:
Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔVT<0.5 V after 24h of 1D=10 μA stress, quite promising for integration in electronic circuits.
Notes:
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