<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Barquinha, P., Pereira, L., Gonçalves, G., Martins, R., Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs</style></title><secondary-title><style face="normal" font="default" size="100%">48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2010</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-79151474587&amp;partnerID=40&amp;md5=4900ca03bfb29d4bca3a2432ec6fdc1e</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">3</style></volume><pages><style face="normal" font="default" size="100%">1376-1379</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔVT&amp;lt;0.5 V after 24h of 1D=10 μA stress, quite promising for integration in electronic circuits.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 1&lt;/p&gt;
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