@conference {Barquinha20101376,
	title = {P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs},
	booktitle = {48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010},
	volume = {3},
	year = {2010},
	note = {<p>cited By 1</p>
},
	pages = {1376-1379},
	abstract = {<p>Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔVT\&lt;0.5 V after 24h of 1D=10 μA stress, quite promising for integration in electronic circuits.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-79151474587\&partnerID=40\&md5=4900ca03bfb29d4bca3a2432ec6fdc1e},
	author = {Barquinha, P., Pereira, L., Gon{\c c}alves, G., Martins, R., Fortunato, E.}
}
